67 GHz three‐spiral transformer CMOS oscillator

Pepe, Domenico; Chlis, Ilias; Zito, Domenico

doi:10.1002/cta.2194

Cited by 6 publications

(12 citation statements)

References 24 publications

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“…Moreover, the designed oscillators must present a propitious phase noise to mitigate the timing problems in the generated spectrums. 49 Based on these explanations and due to the structural simplicity, lower-power consumption and area, acceptable phase noise, and high voltage swing, the delay stage ring VCOs are a potential candidate for low-power and energyefficient X-band satellite communication applications. With the help of fascinating electronic properties of the GAA-CNTFET transistors, in the following sections, we propose a low-power GAA-CNTFET-based ring VCO.…”

Section: X-band Satellite Communicationmentioning

confidence: 99%

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A low‐power delay stage ring VCO based on wrap‐gate CNTFET technology for X‐band satellite communication applications

Jooq

Bozorgmehr

Mirzakuchaki

2020

Circuit Theory & Apps

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SummaryOver the past few years, with lower power consumption, reasonable layout area, and the ease of integration with standard circuit design technologies compared to the other counterparts, delay stage ring voltage‐controlled oscillators (VCOs) have been in the limelight of microelectronics scientists. However, few efforts have focused on representing high‐performance delay stage ring VCOs in the deep nanometric regime. In this regard, by virtue of outstanding electrical properties of carbon nanotube wrap‐gate transistors, this work aims to propose a carbon nanotube field‐effect transistor (CNTFET)–based delay stage ring VCO. After performing rigorous simulations, the proposed ring VCO which has been designed by 10‐nm gate‐all‐around (GAA) CNTFET technology shows suitable electrical performance metrics. The simulation results demonstrate that the proposed GAA‐CNTFET‐based ring VCO consumes 85.176 μW at with a 6.12‐ to 10.42‐GHz frequency tuning range. At the worst‐case noise conditions, the proposed design presents ‐90.747 dBc/Hz phase noise at 1 MHz offset frequency. With occupying 1.414 μm2 physical area, the proposed VCO is appropriate for the ultracompact nanoscale radio frequency apparatus. Our simulation results accentuate that with further improvements and commercializing the fabrication techniques for CNTFET transistors, the proposed GAA‐CNTFET‐based VCO can be considered as a potential candidate for X‐band satellite communication applications.

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Section: X-band Satellite Communicationmentioning

confidence: 99%

“…These fluctuations may disrupt the operation of the subsequent units. Moreover, the designed oscillators must present a propitious phase noise to mitigate the timing problems in the generated spectrums 49 …”

Section: Introductionmentioning

confidence: 99%

A low‐power delay stage ring VCO based on wrap‐gate CNTFET technology for X‐band satellite communication applications

Jooq

Bozorgmehr

Mirzakuchaki

2020

Circuit Theory & Apps

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“…The phase noise due to flicker noise from M C can be written as [ Pepe et al ., ]

ℒ ((), normalΔ italicω) (|, _{flicker}) = \frac{2 {KI}_{Β} μ_{n}}{{NC}_{tank}^{2} V_{tank}^{2} L^{2}} \frac{ω_{1 / f^{3}}}{ω_{1 / f}} \frac{1}{normalΔ ω^{3}}

where K is a process‐dependent constant approximately equal to 10 −23 V 2 F , I B is the total bias current, μ n is the electron mobility approximately equal to 0.039 m 2 /( V × s ), N = 2 for the differential cross‐coupled topology, C tank is the LC tank capacitance, V tank is the peak amplitude of the output voltage V OUT ,

ω_{1 true/ f^{3}}

is the frequency where the sideband power due to thermal noise is equal to the sideband power due to flicker noise, ω 1/ f is the corner frequency of the flicker noise generated by M C , and Δ ω is the angular frequency offset from the oscillation frequency.…”

Section: Mm‐wave Active‐lc Oscillator: Circuit Analysismentioning

confidence: 99%

“…The phase noise due to thermal noise from M C and R 1 can be written as [ Pepe et al ., ]

ℒ ((), normalΔ italicω) (|, _{thermal}) = \frac{2 K_{B} T}{{NC}_{tank}^{2} V_{tank}^{2}} \frac{1}{normalΔ ω^{2}} ((), \frac{2 I_{B} γ}{π V_{tank}} + \frac{1}{2 R_{1}}),

where K B is the Boltzmann constant, T is the absolute temperature, and γ is the excess noise coefficient.…”

Section: Mm‐wave Active‐lc Oscillator: Circuit Analysismentioning

confidence: 99%

50 GHz active‐LC CMOS oscillator: Theoretical study and experimental proofs

2017

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A 50 GHz cross‐coupled differential‐pair oscillator with a high‐Q active inductor in the LC tank has been designed and fabricated in 65 nm bulk complementary metal‐oxide semiconductor (CMOS) technology. The principle of operation is explained and a complete theoretical study is carried out. The analytical expressions for the open loop transfer function, oscillation frequency, start‐up condition, tank impedance, and phase noise are derived. The results of the analytical study are compared with those obtained by SpectreRF simulations in the Cadence design environment. Measurement results of the stand‐alone mm‐wave active inductor show an equivalent inductance of 133 pH with a quality factor exceeding 400 at 50 GHz, demonstrating experimentally the implementation of high‐Q active inductors operating at the millimeter waves in CMOS technology. The measurement results of the oscillator show a phase noise of −85 dBc/Hz at 1 MHz frequency offset from the carrier when the active inductor is switched off and −91 dBc/Hz when it is switched on, leading to a phased noise reduction of 6 dB.

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“…In order to show that the magnetic coupling between L 1 and L 2 pairs enhances the Q of the LC tank in the oscillator topology of Figure , we will derive a closed‐form expression for Q. In order to do that, we break the oscillator loop at the gate of M 1 , so as to find the open‐loop transfer function V out3 (s)/I in2 (s) , as shown in Figure . This yields

I_{7} + I_{italicin 2} + I_{8} = 0

V_{italicout 3} = ((), I_{7} + I_{italicin 2}) \frac{1}{s C_{1}^{'}} + I_{7} Z_{1}^{'}

I_{8} = \frac{V_{out 3}}{Z_{2}^{'}}

…”

Section: Analysis Of the Oscillator Circuit Topologymentioning

confidence: 99%

Transformer‐coupled π‐network differential CMOS oscillator circuit topology

Chlis

Pepe²,

Zito

2016

Circuit Theory & Apps

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Summary This paper reports a novel oscillator circuit topology based on a transformer‐coupled π‐network. As a case study, the proposed oscillator topology has been designed and studied for 60 GHz applications in the frame of the emerging fifth generation wireless communications. The analytical expression of the oscillation frequency is derived and validated through circuit simulations. The root‐locus analysis shows that oscillations occur only at that resonant frequency of the LC tank. Moreover, a closed‐form expression for the quality factor (Q) of the LC tank is derived which shows the enhancement of the equivalent quality factor of the LC tank due to the transformer‐coupling. Last, a phase noise analysis is reported and the analytical expressions of phase noise due to flicker and thermal noise sources are derived and validated by the results obtained through SpectreRF simulations in the Cadence design environment with a 28 nm CMOS process design kit commercially available. Copyright © 2016 John Wiley & Sons, Ltd.

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67 GHz three‐spiral transformer CMOS oscillator

Cited by 6 publications

References 24 publications

A low‐power delay stage ring VCO based on wrap‐gate CNTFET technology for X‐band satellite communication applications

A low‐power delay stage ring VCO based on wrap‐gate CNTFET technology for X‐band satellite communication applications

50 GHz active‐LC CMOS oscillator: Theoretical study and experimental proofs

Transformer‐coupled π‐network differential CMOS oscillator circuit topology

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