692 GHz High-Efficiency Compact-Size InP-Based Fundamental RTD Oscillator

Lee, Jongwon; Kim, Maengkyu; Lee, Jooseok

doi:10.1109/tthz.2021.3108431

Cited by 11 publications

(8 citation statements)

References 20 publications

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“…To demonstrate the mmW application capability of the flip-chip bonding technology, an InP resonant tunneling diode (RTD), which is one of the semiconductor devices operating at mmW and terahertz (THz) frequencies [ 23 , 24 ], was flip-chip-bonded for the first time with the SiC substrate and its DC, and RF performance was investigated. Figure 12 a shows a fabricated InP-substrate-based sample consisting of an RTD, CPW PAD metals for the flip-chip interconnection, and dummy PAD metals functioning as supporting pillars during the bonding process.…”

Section: Resultsmentioning

confidence: 99%

Section: Application To Mmw Device Of the Flip-chip μ-Bump Bonding Te...mentioning

confidence: 99%

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Implementation of Flip-Chip Microbump Bonding between InP and SiC Substrates for Millimeter-Wave Applications

Lee

Song

et al. 2022

Micromachines

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Flip-chip microbump (μ-bump) bonding technology between indium phosphide (InP) and silicon carbide (SiC) substrates for a millimeter-wave (mmW) wireless communication application is demonstrated. The proposed process of flip-chip μ-bump bonding to achieve high-yield performance utilizes a SiO2-based dielectric passivation process, a sputtering-based pad metallization process, an electroplating (EP) bump process enabling a flat-top μ-bump shape, a dicing process without the peeling of the dielectric layer, and a SnAg-to-Au solder bonding process. By using the bonding process, 10 mm long InP-to-SiC coplanar waveguide (CPW) lines with 10 daisy chains interconnected with a hundred μ-bumps are fabricated. All twelve InP-to-SiC CPW lines placed on two samples, one of which has an area of approximately 11 × 10 mm2, show uniform performance with insertion loss deviation within ±10% along with an average insertion loss of 0.25 dB/mm, while achieving return losses of more than 15 dB at a frequency of 30 GHz, which are comparable to insertion loss values of previously reported conventional CPW lines. In addition, an InP-to-SiC resonant tunneling diode device is fabricated for the first time and its DC and RF characteristics are investigated.

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Section: Resultsmentioning

confidence: 99%

Section: Application To Mmw Device Of the Flip-chip μ-Bump Bonding Te...mentioning

confidence: 99%

Implementation of Flip-Chip Microbump Bonding between InP and SiC Substrates for Millimeter-Wave Applications

Lee

Song

et al. 2022

Micromachines

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“…46 So, the operating frequency of RTD is very high. Lee et al 47 proposed an InP-based RTD oscillator with an RF output power of 9.3 μW and efficiency of 0.274% at an oscillation frequency of 692 GHz. A high-power RTD terahertz source has been demonstrated over 10 mW at 0.45 THz with a DC to RF efficiency of ∼1%.…”

Section: G Comparison With Other Thz Sourcesmentioning

confidence: 99%

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

Dai,

Li,

Gao

et al. 2024

Journal of Applied Physics

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A novel bilateral impact-ionization-avalanche-transit-time (BIMPATT) diode based on AlGaN/GaN two-dimensional electron gas is proposed in this article. The BIMPATT is compatible with the available GaN high electron mobility transistor (HEMT) manufacturing process and has a shorter actual electron transit distance than existing HEMT-like IMPATT (HIMPATT) diodes. Compared with the same-sized HIMPATT, the optimum frequency of BIMPATT rises from 320 to 420 GHz and possesses a far wider operating frequency band, especially in the near 0.9 THz range. The maximum DC-RF conversion efficiency rises from 12.9% to 17.6%. The maximum RF power of BIMPATT is 3.18 W/mm, which is similar to 3.12 W/mm of the HIMPATT. Furthermore, our simulation demonstrated that the characteristics of BIMPATT are significantly affected by the length of anode and the thickness of the AlGaN barrier layer. The effects of ohmic contact resistance and background impurities on BIMPATT are also taken into account. This paper provides a reference for the design and characteristics enhancement of the lateral IMPATT devices.

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“…Shunt resistors, which are commonly used for suppressing parasitic oscillation, require a dc short circuit with a resistance approximately equivalent to the absolute value of the NDR, and, for this reason, the dc power consumption of the device is almost doubled [15]. Meanwhile, in an array configuration of active antennas with integrated antennas and RTDs, the absolute value of the NDR in the oscillation circuits is typically less than 1 Ω because, when the number of antennas increases, the number of RTDs also increases.…”

Section: B Design Of Bias Stabilizermentioning

confidence: 99%

“…Therefore, using a conventional method of suppressing parasitic oscillation for the array would lead to an increase in the maximum rating of the power supply and degrade the reliability due to the heat generated by the shunt resistors. The array antenna reported in this article addresses this issue by using capacitive impedance (1/ωC, ω: angular frequency, C: capacitance) to provide an RC short circuit with a series connection of resistors and capacitances [15], [24].…”

Section: B Design Of Bias Stabilizermentioning

confidence: 99%

A High-Power Terahertz Source Over 10 mW at 0.45 THz Using an Active Antenna Array With Integrated Patch Antennas and Resonant-Tunneling Diodes

Koyama

Kitazawa

Yukimasa

et al. 2022

IEEE Trans. THz Sci. Technol.

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We propose a compact, high-power, and highdirectivity surface-emitting terahertz (THz) source based on an array of active antennas with integrated patch antennas and resonant-tunneling diodes (RTDs). An array configuration of active antennas, each with an integrated patch antenna and two RTDs and coupled by microstrip lines, enables spatial power combining and improves directivity through coherent oscillation. We confirmed a maximum radiation power of 11.8 mW in a prototype 6 × 6 array at an oscillation frequency of 0.45 THz. Parasitic oscillation at low frequencies was suppressed by use of a bias stabilization circuit consisting of series-connected resistors and capacitors, and the dc to RF efficiency of this device was estimated to be approximately 1%. The radiant intensity of 210 mW/sr and the 3-dB beamwidth of 13°for the measured 6 × 6 array confirmed that directivity was improved by coherent oscillation based on mutual injection locking. The directivity of the patch antenna capable of surface emission can be controlled only by the number of antennas, even if there is no secondary radiator, such as an Si lens. The obtained results suggest that RTDs are promising as practical THz sources for realizing applications of THz imaging and 6G communication.

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692 GHz High-Efficiency Compact-Size InP-Based Fundamental RTD Oscillator

Cited by 11 publications

References 20 publications

Implementation of Flip-Chip Microbump Bonding between InP and SiC Substrates for Millimeter-Wave Applications

Implementation of Flip-Chip Microbump Bonding between InP and SiC Substrates for Millimeter-Wave Applications

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

A High-Power Terahertz Source Over 10 mW at 0.45 THz Using an Active Antenna Array With Integrated Patch Antennas and Resonant-Tunneling Diodes

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