7.1: <i>Invited Paper</i>: LTPS Processes for AMLCD and AMOLED Applications

Fruehauf, Norbert; Baur, Holger; Hergert, Steffen; Hlawatsch, Rene; Jelting, Sven; Persidis, Efstathios; Pieralisi, Fabio; Schalberger, Patrick

doi:10.1889/1.2785228

Cited by 3 publications

(1 citation statement)

References 3 publications

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“…PMOS circuits have various advantages including lower doping activation temperature, less influence of hot carriers and more stable process. [1] When the scan and data circuits have been integrated on glass, the peripheral gate and source driver IC function could be replaced bringing us a more compact and slimmer screen. So our team has paid much attention to this research through designing the novel and stable PMOS poly-Si TFT shift register and the data latch unit which will be detailed as follow.…”

Section: Introductionmentioning

confidence: 99%

Design of poly-Si TFT Shift Register and Latch Circuit by PMOS Process

Sun

Meng

et al. 2009

ECS Trans.

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The design of the PMOS dynamic shift register is proposed. This circuit had no static power consumption when generating the scan pulse output. The further research on the data driver circuit is also presented. Using PMOS dynamic shift register we had fabricated, we designed a digital signal latch unit based on PMOS TFT technology. The data signal could be sampled and latched serially through the combination of shift register and latch unit. Furthermore, we present a novel 2-phase clock shift register. It was composed of a dynamic signal transmitting part and a static signal holding part. Since the adoption of static holding circuit and the effect of bootstrapping, there is no capacitance in the schematic, which leads to a more compact and stable layout. The simulation result from Smart-Spice of Silvaco EDA software will be discussed.

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Section: Introductionmentioning

confidence: 99%

Design of poly-Si TFT Shift Register and Latch Circuit by PMOS Process

Sun

Meng

et al. 2009

ECS Trans.

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High-performance thin-film transistors based on aligned carbon nanotubes for mini- and micro-LED displays

Xi,

Liu,

Zhu

et al. 2024

Carbon

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P‐60: The Performance Enhancement of the 2ωYAG Laser‐Crystallized Poly‐Si Using a Back‐Side Self‐Heating Layer of a‐Si

Ding

Yao

et al. 2010

Symp Digest of Tech Papers

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Crystallization of a-Si by doubled frequency YAG laser using a self-heating layer technology was proposed in this paper. The grain size and the hall mobility of the resulted poly-Si thin film were enhanced up to almost two times by using the self-heating layer technology. This technology has a dual heating effect:heat-retaining and self-heating with an easier process and wider process window, compared to the conventional capping-layer technology.

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7.1: Invited Paper: LTPS Processes for AMLCD and AMOLED Applications

Cited by 3 publications

References 3 publications

Design of poly-Si TFT Shift Register and Latch Circuit by PMOS Process

Design of poly-Si TFT Shift Register and Latch Circuit by PMOS Process

High-performance thin-film transistors based on aligned carbon nanotubes for mini- and micro-LED displays

P‐60: The Performance Enhancement of the 2ωYAG Laser‐Crystallized Poly‐Si Using a Back‐Side Self‐Heating Layer of a‐Si

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