7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector

Alkhazragi, Omar; Kang, Chun Hong; Kong, Meiwei; Liu, Guangyu; Lee, Changmin; Li, Kuang-Hui; Zhang, Huafan; Wagstaff, Jonathan M.; Alhawaj, Fatimah; Ng, Tien Khee; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Ooi, Boon S.

doi:10.1109/lpt.2020.2995110

Cited by 14 publications

(3 citation statements)

References 24 publications

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“…In recent years, visible light communication (VLC) technology has recently been regarded as one of the most important wireless data transfer techniques due to abundance of unlicensed spectrum resources, excellent security, and anonymity [1], [2], [3], [4], [5]. High transfer speed light sources are fundamental for the VLC framework.…”

Section: Introductionmentioning

confidence: 99%

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

Qiu

Tao

et al. 2023

IEEE Photonics J.

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Micro-light-emitting diodes (micro-LEDs) with high modulation rates and low power consumption could attract growing attention as visible light communication (VLC) technology advances. The designed and fabricated semi-polar micro-LEDs have achieved high bandwidth at low current injection due to the reduced quantum-confined Stark effect (QCSE), which was significantly greater than that of typical c-plane at the same current injection. Semi-polar green micro-LEDs got a -3 dB bandwidth that surpasses 500 MHz and 1 GHz at low current densities of 43.8 A/cm 2 and 120.6 A/cm 2 , while blue micro-LEDs exceed 500 MHz at low current densities of 76.6 A/cm 2 , respectively. Additionally, the free space VLC system has shown semi-polar blue and green micro-LED transmission data rates of 3.495 Gbps (433 A/cm 2 ) and 3.483 Gbps (402 A/cm 2 ) respectively. Semi-polar micro-LEDs, which can achieve low power consumption and high bandwidth, are anticipated to play a significant role in the development of energy-efficient VLC in the future.

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Section: Introductionmentioning

confidence: 99%

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

Qiu

Tao

et al. 2023

IEEE Photonics J.

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“…6 InGaN/GaN based p-MQWs-n photodiodes have achieved pretty high response speed and quantum efficiency. [7][8][9] However, the responsivity of these PDs is still inhindered by the opposite polarization field. As shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Carrier transport modulation in InGaN/GaN multi quantum wells using polarization engineering for high-performance visible-light photodetection

Lv¹,

Fang²,

Xu³

et al. 2023

Ninth Symposium on Novel Photoelectronic Detection Technology and Applications

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“…[10][11][12] Thanks to the development of semiconductor industry technology, the InGaN photodetector with PIN and integrated structure has been used in visible light communication systems. [13][14][15] However, the above InGaN-based ultrafast photodetector heavily relies on expensive, slow, complex material growth and chip preparation processes. [16] Accordingly, the development of a simple-structured photodetector with a fast response speed is urgently needed.…”

mentioning

confidence: 99%

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed

Chai

Liu

Chen

et al. 2023

Adv Elect Materials

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requires the photodetection wavelength of the photo detector could match the source wavelength. [4][5][6] In this regard, the bandgap tunable semiconductor and its fabricated photodetector with fast response speed have become a research hotspot. [7][8][9] InGaN semiconductors can achieve wavelength-selective absorption owning to their tunable bandgap (0.65-3.4 eV), which is adjusted by varying the composition of Indium (In). [10][11][12] Thanks to the development of semiconductor industry technology, the InGaN photodetector with PIN and integrated structure has been used in visible light communication systems. [13][14][15] However, the above InGaN-based ultrafast photodetector heavily relies on expensive, slow, complex material growth and chip preparation processes. [16] Accordingly, the development of a simple-structured photodetector with a fast response speed is urgently needed. [17] The photodetector with simple heterojunction demonstrates fast photodetection owing to the built-in electric field to facilitate carrier separation and transport. [18,19] Among the III-nitrides materials, on account of the high electron mobility (4400 cm 2 V −1 s −1 ), the InN semiconductors are widely used to fabricate fast photodetectors. [20,21] Regarding the mentioned above, the InN/InGaN heterojunction is considered a promising candidate for preparing a fast photodetector. This is well known that the high-performance photodetector composed of wide band gap materials lies on top of the narrow band gap materials, thus the InGaN should be grown on the top of InN. [22] However, this InN/InGaN heterojunction cannot be realized due to the growth temperature of InGaN is higher than the dissociation temperature of InN.The dilemma above might be solved by introducing 1D InN nanorod array (NRA) to InGaN films, which could not only relax the strain to form defect-free lattice-mismatched heterostructures but also break through the material arrangement limit of the bandgap. [23,24] Previous research has reported an InN/InGaN heterojunction with the structure of InN NRA on the InGaN epilayer and applied it to optoelectronic devices. [25,26] Nevertheless, this method needs phase-separated from In-rich InGaN buffer as the nucleation sites, which will cause the diameter uniformity of these structures to be poor. The axial heterojunction structure is an effective strategy, on one hand, the diameter uniformity of InN could be controlled, on the other hand, the 1D geometry could confine carriers separation in a very small NRA Due to wavelength-selective characteristics, the InGaN-based photodetectors show bright prospects in visible light communication and fast imaging system. However, the application of InGaN photodetectors with simple structures is limited in the above field owing to the slow response speed. Herein, an ultrafast photodetector based on axial InN/InGaN nanorod array (NRA) heterojunction is prepared through a self-catalytic high (930 °C) and low (400 °C) temperature two-step growth method by molecular beam epitaxy (MBE). The perf...

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7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector

Cited by 14 publications

References 24 publications

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

Carrier transport modulation in InGaN/GaN multi quantum wells using polarization engineering for high-performance visible-light photodetection

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed

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