7.5 kW/mm
            <sup>2</sup>
            current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

Simin, Grigory; Hu, X.; Il’inskaya, N. D.; Kumar, Amit; Koudymov, A.; Zhang, J.; Khan, M. Asif; Gaška, R.; Shur, M. S.

doi:10.1049/el:20001401

Cited by 98 publications

(26 citation statements)

References 9 publications

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“…Besides, the gate capacitance of MOSHFETs is lower due to larger gate-to-channel separation. The breakdown voltage of MOSHFETs is of the same value or higher as that of HFETs [9]. It can be as high as 500 V as shown in [9].…”

Section: Introductionmentioning

confidence: 87%

“…The breakdown voltage of MOSHFETs is of the same value or higher as that of HFETs [9]. It can be as high as 500 V as shown in [9]. These features make MOSHFET an excellent candidate for high-power low-loss RF switches, phase shifters and attenuators.…”

Section: Introductionmentioning

confidence: 92%

“…As shown in [9], the for the MOSHFET can be as high as 500 V. "For the devices used for this experiment, the gate-drain spacing was not optimized for the highest and V. Taking the value of V, we estimate the maximum power to be W." This estimate shows that the "ON" state is the one that limits the high power performance of MOSHFET based RF switch.…”

Section: Moshfet Rf Switch Characteristicsmentioning

confidence: 97%

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Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Koudymov

Simin

et al. 2002

IEEE Electron Device Lett.

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Abstract-We demonstrate a novel RF switch based on a multifinger AlGaN/GaN MOSHFET. Record high saturation current and breakdown voltage, extremely low gate leakage current and low gate capacitance of the III-N MOSHFETs make them excellent active elements for RF switching. Using a single element test circuit with 1-mm wide multifinger MOSHFET we achieved 0.27 dB insertion loss and more than 40 dB isolation. These parameters can be further improved by impedance matching and by using submicron gate devices. The maximum switching power extrapolated from the results for 1A/mm 100 m wide device exceeds 40 W for a 1-mm wide 2-A/mm MOSHFET.Index Terms-Field-effect transistor (FET), GaN, HEMT, heterostructure field-effect transistor (HFET), MOSHFET, RF, switch, wireless.

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Section: Introductionmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 92%

Section: Moshfet Rf Switch Characteristicsmentioning

confidence: 97%

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Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Koudymov

Simin

et al. 2002

IEEE Electron Device Lett.

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“…A commonly observed problem in GaN high electron mobility transistors is the so-called ''current collapse'' in which the application of a high drain-source voltage leads to a decrease of the drain current and increase in the knee voltage. [19][20][21][22][23][24][25][26][27] The surface traps responsible of this phenomenon may be mitigated to a greater or lesser extent by use of appropriate surface passivation, most often SiN x deposited by plasma-enhanced chemical vapor deposition (PECVD), while the density of buffer traps which may also contribute to current drift is a function of the epitaxial growth conditions.…”

Section: Introductionmentioning

confidence: 99%

Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN

Hlad

Voss

Gila

et al. 2006

J. Electron. Mater.

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Sc 2 O 3 ) x (Ga 2 O 3 ) 1ÿx films grown by molecular beam epitaxy show promise for use as surface passivation layers and gate dielectrics on GaN-based high electron mobility transistors. Completely selective, low-damage, dry etching of (Sc 2 O 3 ) x (Ga 2 O 3 ) 1ÿx films with respect to GaN can be achieved with low-power inductively coupled plasmas of CH 4 /H 2 /Ar with etch rates in the range 200-300 Å /min. The incident ion energies are of order 100 eV, and no roughening of the underlying GaN was observed under these conditions. Similar etch rates were obtained with Cl 2 /Ar discharges under the same conditions, but GaN showed rates almost an order of magnitude higher.

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“…2,3 We have also reported on the fabrication of a power switch using the AlGaN/GaN MOSHFET. 3 A switching power density as high as 7.5 kW/mm 2 was reported. This maximum power density of such a switch is also proportional to I DSM .…”

mentioning

confidence: 99%

Maximum current in nitride-based heterostructure field-effect transistors

Koudymov

Husna

Simin

et al. 2002

Applied Physics Letters

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We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructure field-effect transistors (HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum current in the HFETs is the forward gate leakage current. In the MOSHFETs, the gate leakage current is suppressed and the overflow of the two dimensional electron gas into the AlGaN barrier region becomes the most important factor limiting the maximum current. Therefore, the maximum current is substantially higher in MOSHFETs than in HFETs. The measured maximum current increases with a decrease in the gate length, in qualitative agreement with the model that accounts for the velocity saturation in the channel and for the effect of the source series resistance. The maximum current as high as 2.6 A/mm can be achieved in MOSHFETs with a submicron gate.

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7.5 kW/mm ² current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

Abstract: Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC Appl.

Cited by 98 publications

References 9 publications

Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN

Maximum current in nitride-based heterostructure field-effect transistors

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7.5 kW/mm 2 current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

Abstract: Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC Appl.

Cited by 98 publications

References 9 publications

Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN

Maximum current in nitride-based heterostructure field-effect transistors

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Product

Resources

About

7.5 kW/mm ² current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates