Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Koudymov, A.; Hu, X.; Simin, Kirill; Simin, Grigory; Ali, Mohd. Hasan; Yang, J.; Khan, M. Asif

doi:10.1109/led.2002.801301

Cited by 66 publications

(24 citation statements)

References 11 publications

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“…4 Even higher rf powers have been achieved using insulated gate AlGaN / GaN metal-oxide-semiconductor heterostructure field-effect transistors ͑MOSHFETs͒. 5,6 All of the above devices used annealed Ohmic source and drain contacts.…”

Section: Iii-nitride Transistors With Capacitively Coupled Contactsmentioning

confidence: 99%

III-nitride transistors with capacitively coupled contacts

Simin

Yang

Koudymov

et al. 2006

Applied Physics Letters

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Al Ga N ∕ Ga N heterostructure field-effect transistor design using capacitively coupled contacts (C3HFET) is presented. Insulated-gate [C3 metal-oxide-semiconductor HFET (C3MOSHFET)] has also been realized. The capacitively coupled source, gate, and drain of C3 device do not require annealed Ohmic contacts and can be fabricated using gate alignment-free technology. For typical AlGaN∕GaN heterostructures, the equivalent contact resistance of C3 transistors is below 0.6Ωmm. In rf-control applications, the C3HFET and especially the C3MOSHFET have much higher operating rf powers as compared to HFETs. C3 design is instrumental for studying the two-dimensional electron gas transport in other wide band gap heterostructures such as AlN∕GaN, diamond, etc., where Ohmic contact fabrication is difficult.

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Section: Iii-nitride Transistors With Capacitively Coupled Contactsmentioning

confidence: 99%

III-nitride transistors with capacitively coupled contacts

Simin

Yang

Koudymov

et al. 2006

Applied Physics Letters

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“…AlGaN/GaN MSM-2DEG varactors with a good capacitance swing can also be used for low-loss high-power RF switching [4][5]. Our previous research [6] showed that the varactor exhibits great potential to improve the surge protection for GaN-based HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Capacitance Swing and Capacitance Ratio of GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor with Different Dielectric Films

Tien¹,

Kuei²,

Chang³

et al. 2015

Journal of Electrical Engineering and Technology

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-The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO 2 , Gd 2 O 3 , and Si 3 N 4 films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si 3 N 4 dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

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“…6͒ and SiC ͑Ref. 7͔͒, switches, [8][9][10] and memory cells. The nitride-based MOSH structure ͑see inset in Fig.…”

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confidence: 99%

“…As the gate bias goes more positive, the 2D electrons start spilling over the AlGaN barrier layer. In the Schottky-based structures, the electron spillover immediately gives rise to gate leakage currents, 8 however, in the MOSH structure the gate currents are blocked by the insulating layer dielectric. The electron accumulation at the dielectricsemiconductor interface further increases the gate capacitance as seen from the C-V plot of Fig.…”

mentioning

confidence: 99%

“…As seen from the above consideration, the MOSH structure significantly expands the range of gate bias voltages available for transistor operation thus increasing the device linearity and output rf powers. 8,14 The available input voltage range for the MOSHFET, ⌬V GMAX can be estimated as ⌬V GMAX = V RST + ͉V TMOSH ͉. The dependence of V RST and V TMOSH on the dielectric thickness plotted using the Eqs.…”

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confidence: 99%

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Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures

Saygi

Koudymov

Adivarahan

et al. 2005

Applied Physics Letters

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The real-space transfer effect in a SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure (MOSH) from the two-dimensional (2D) electron gas at the heterointerface to the oxide-semiconductor interface has been demonstrated and explained. The effect occurs at high positive gate bias and manifests itself as an additional step in the capacitance-voltage (C-V) characteristic. The real-space transfer effect limits the achievable maximum 2D electron gas density in the device channel. We show that in MOSH structures the maximum electron gas density exceeds up to two times that at the equilibrium (zero bias) condition. Correspondingly, a significant increase in the maximum channel current (up to two times compared to conventional Schottky-gate structures) can be achieved. The real-space charge transfer effect in MOSH structures also opens up a way to design novel devices such as variable capacitors, multistate switches, memory cells, etc.

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Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

Cited by 66 publications

References 11 publications

III-nitride transistors with capacitively coupled contacts

III-nitride transistors with capacitively coupled contacts

Capacitance Swing and Capacitance Ratio of GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor with Different Dielectric Films

Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures

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