7-Gb/s monolithic photoreceiver fabricated with 0.25-.MU.m SiGe BiCMOS technology

Abstract

Abstract:We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10 −10 at −1 dBm incident optical power. Keywords: high-speed photoreceiver, Si avalanche photodetectors, SiGe BiCMOS, transimpedance amplifier Classification: Fiber optics, Microwave photonics, Optical interconnection, Photonic signal processing, Photonic integration and systems References

A bandwidth adjustable integrated optical receiver with an on-chip silicon avalanche photodetector

“…Compared to the previous result [4], our receiver achieves better performance by employing an improved Si APD and such circuit techniques as DC compensation and capacitive degeneration. In particular, the new optical receiver includes the adjustable capacitive degeneration block so that receiver bandwidth can be optimized for the best bit error rate (BER) performance.…”

“…Compared with the Si APD used in [4], the active area size is reduced to 10 µm × 10 µm so that larger photodetection bandwidth can be achieved. The measured 3-dB photodetection bandwidth of the Si APD is about 3.5 GHz with a 50-Ω load.…”

“…1 (b), the buffer contains the capacitive degeneration block that enhances the receiver bandwidth. Compared to the active inductor used in [4], capacitive degeneration requires less voltage headroom and, consequently, lower supply voltage. It generates a zero in the receiver fre- quency response, whose location can be controlled by the impedance of the parallel resistor and capacitors.…”

“…We have previously reported various types of siliconbased avalanche photodetectors (Si APDs) which provide high responsivity and large bandwidth [2,3]. In addition, we have demonstrated a monolithically integrated optical receiver having a Si APD fabricated with standard silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor (BiCMOS) technology [4].…”

“…1 (a) shows the simplified block diagram of the fabricated optical receiver. The cross-section of the fabricated Si APD and BiCMOS transistors can be found in [4]. The optical receiver is composed of a Si APD, a DC compensation circuit, a single-ended transimpedance amplifier (TIA), a single-to-differential amplifier with a low-pass filter, and an output buffer.…”