An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxidesemiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOScompatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

Abstract:We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10 −10 at −1 dBm incident optical power. Keywords: high-speed photoreceiver, Si avalanche photodetectors, SiGe BiCMOS, transimpedance amplifier Classification: Fiber optics, Microwave photonics, Optical interconnection, Photonic signal processing, Photonic integration and systems References

Abstract-This

Abstract:A bandwidth adjustable integrated optical receiver having an on-chip silicon avalanche photodetector is realized with standard 0.25-µm silicon-germanium bipolar complementary metal-oxidesemiconductor technology for optical interconnect applications. With the controllable capacitive degeneration technique, the optical receiver bandwidth can be adjusted for the best bit error rate performance. Keywords: high-speed optical receiver, silicon avalanche photodetector, silicon-germanium BiCMOS, transimpedance amplifier Classification: Fiber optics, Microwave photonics, Optical interconnection, Photonic signal processing, Photonic integration and systems References