A fully-integrated 125-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector

Abstract

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxidesemiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOScompatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

Bandwidth Improvement of CMOS-APD With Carrier-Acceleration Technique

“…For the measurements, 1 mW 850 nm light is injected into the CMOS-APD surface through a lensed fiber having 10 µm diameter. The 1 mW input optical power is used in consideration of the sensitivity range of CMOS integrated optical receivers [6], [19]. A vector network analyzer is used to modulate the optical signal provided by a laser diode with a 20 GHz electro-optical modulator and detect output signals of the CMOS-APD.…”

A Stagger-Tuned Transimpedance Amplifier

“…Therefore, unlike the reversed triple-resonance network (RTRN) in [14], here the amount of peaking can be modified by appropriately selecting parameters constituting ω res,1 and ω res, 3 .…”

“…6, the peaking is about 1 dB. 3 The minimum value of R 1 is restricted by the maximum input noise current to be described in Section IV. Decreasing R 1 increases the noise contribution of the following stages.…”

“…C MOS circuits are becoming increasingly more attractive for high-data-rate optical communications due to their higher integration densities and lower costs [1]- [3]. After a photodiode, a transimpedance amplifier (TIA) is the first building block of a broadband optical receiver.…”

Low‐power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal–oxide semiconductor technology

“…For short-reach optical interconnect applications, various 850 nm optoelectronic integrated circuit (OEIC) receivers fabricated with standard complementary metal-oxide semiconductor (CMOS) technology have been actively investigated over the past decade [1][2][3][4][5][6][7][8][9][10][11][12][13]. Most of the previous works focus mainly on realisation of high-speed operations for multi-gigabit data transmission applications, and the achieved data rates have continuously increased over the years as shown in Fig.…”