700V thin SOI-LIGBT with high current capability

Zhu, Jun‐Jie; Sun, Weifeng; Qian, Qinsong; Cao, Lu; He, Nailong; Zhang, Sen

doi:10.1109/ispsd.2013.6694443

Cited by 7 publications

(3 citation statements)

References 3 publications

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“…As a key device of single-chip intelligent power integrated circuits (IC) [1], the lateral insulated gate bipolar transistor based on silicon-on-insulator (SOI-LIGBT) is widely used in the switching power supply and variable-frequency motor drive [2,3]. Some properties are important for the SOI-LIGBT, e.g.…”

Section: Introductionmentioning

confidence: 99%

A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses

Li¹,

Huang²,

Ma³

et al. 2023

Semicond. Sci. Technol.

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A novel trench gates double reduced surface field (RESURF) lateral insulated gate bipolar transistor based on silicon-on-insulator (SOI-LIGBT) is proposed and investigated. A p-top layer connected to the Emitter via two series diodes and n-rings surrounding the bottom of trench gates are used to reduce the on-state voltage drop (VCE(sat)) and turn-off loss (Eoff). A deep trench with a p-ring is introduced to form a gate-drain shorted PMOS, which can automatically raise the potential of the p-ring during turning off so as to enhance the dynamic avalanche immunity. Besides, the deep trench with a p-ring can shield the high electric field from n-rings at the blocking state, which avoids the breakdown of n-rings. Simulation results indicate that, the proposed LIGBT can be safely turned off even under a bus voltage equal to the breakdown voltage (VB), and VCE(sat) under Eoff = 1 mJ/cm2 can be 24% lower than that of the conventional LIGBT.

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Section: Introductionmentioning

confidence: 99%

A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses

Li¹,

Huang²,

Ma³

et al. 2023

Semicond. Sci. Technol.

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“…The thin SOI LIGBT also suffers the degradation on both V ON and J sat owing to the narrowed current path and the electronhole pair recombination on both top and bottom Si/SiO 2 interfaces [12,13]. Many literatures have been proposed to improve the current capability of the LIGBTs at the expense of large chip area [14][15][16][17][18]. The tridimensional channel (TC) LIGBTs on thin SOI film has been experimentally demonstrated its high conduction current capability [15,18].…”

Section: Introductionmentioning

confidence: 99%

Operation mechanism and performance optimization for a novel ultralow loss SOI LIGBT with high current capability

Fan¹,

Luo²,

Wei³

et al. 2020

Semicond. Sci. Technol.

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In this paper, a novel ultralow on-state voltage-drop (V ON ) and high current capability SOI lateral insulated gate bipolar transistor (LIGBT) is proposed and investigated by simulation. The proposed device features a folded trench gate (FTG) and a step thickness (ST) drift region filled with insulator, named FTS LIGBT. The FTG is employed to increase the channel density and modulate the current distribution, achieving high current capability and reducing the V ON . The stepped insulator in drift region acts as the barrier to suppresses holes from being extracted by cathode and enhances the conductivity modulation, thus further contributes to an ultralow V ON in the on-state. Meanwhile, the drift region with varied thickness approximates the effect of variation of lateral doping (VLD) technique to optimize the electric-field distribution, and then maintains high breakdown voltage (BV ). Additionally, the T-shaped P+cathode region improves hole collection efficiency and vertical channels provide a low-resistance for hole current, and thus improves the latch-up immunity and short-circuit capability. Compared with the conventional LIGBT at the same turn-off loss (E OFF ), the V ON of the FTS LIGBT is reduced by 23% and 38% at the current density of 100 A cm −2 and 200 A cm −2 , respectively; The E OFF is reduced by 53% at the current density of 100 A cm −2 at the same V ON . The FTS exhibits high saturation current capability (751 A cm −2 ), which is 2.5 times as that of the conventional LIGBT.

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“…The extraction methodology is applicable to the, 1-D like, field expansion (Fig. 4.1c,d) found in the gradient based FP assisted RESURF devices [2], using either trench or lateral [33,66,[87][88][89]) drain extension configurations. A important requirement is that the extension is longer than 5 times the characteristic length λ (Fig.…”

Section: Introductionmentioning

confidence: 99%

Field-plate assisted RESURF power devices : gradient based optimalization, degradation and analysis

Boksteen¹

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700V thin SOI-LIGBT with high current capability

Cited by 7 publications

References 3 publications

A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses

A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses

Operation mechanism and performance optimization for a novel ultralow loss SOI LIGBT with high current capability

Field-plate assisted RESURF power devices : gradient based optimalization, degradation and analysis

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