75 kbit printed indium oxide (IO)/indium gallium zinc oxide (IGZO) heterojunction photoelectric synaptic transistor arrays for an artificial visual memory system

Shao, Shuangshuang; Wang, Suyun; Li, Min; Xie, Tanghao; Fang, Yuxiao; Guo, Ping; Chen, Zhaofeng; Zhao, Jianwen

doi:10.1039/d3tc00781b

Cited by 8 publications

(4 citation statements)

References 55 publications

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“…As is widely known, the oxygen vacancies form an additional state at the near VBM region. Therefore, oxygen vacancies could generate photocurrent onto the conduction band by absorbing relatively lower photon energy of visible light wavelength. , Various methods, such as doping polymers, mechanochemical treatments, or forming heterostructures, have been explored to enhance the detection characteristics of visible light using oxygen vacancies. ,,− However, these methods often result in reduced electrical characteristics of the device, such as a transistor. Since our IGZO:Cd TFTs exhibited highly enhanced electrical characteristics and increased amounts of oxygen vacancies, we have adopted them as phototransistors.…”

Section: Results and Discussionmentioning

confidence: 99%

Boosting the Visible Light Optoelectronic Synaptic Characteristics of Solution-Processed IGZO Transistors via Vertically Diffused Cd Dopants

Jeong,

Park,

Jeong

et al. 2023

ACS Appl. Electron. Mater.

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Inspired by the human visual system, optoelectronic synaptic transistors have recently received a great deal of attention as promising candidates for next-generation neuromorphic computing systems. For the low-cost, mass production of optoelectronic synaptic devices, it is essential to fabricate devices through a solution process. Furthermore, there should be no compromise on electrical characteristics for improving photoresponse characteristics in high-performance optoelectronic synaptic devices. To obtain both highly enhanced photoresponse characteristics and electrical characteristics, we introduce an indium gallium zinc oxide (IGZO)-based optoelectronic synaptic transistor by doping cadmium (Cd) using a vertical diffusion process. The Cd-doped IGZO transistor showed a remarkable increase in optoelectronic characteristics with a field effect mobility of 8.18 cm 2 V −1 s −1 and on/off current ratio of 1 × 10 8 , owing to the increased film density and small effective electron mass of the Cd dopant. Furthermore, the amount of oxygen vacancies of the IGZO film was remarkably increased by doping Cd, which make the IGZO stimulated by incident visible light wavelength. Therefore, we successfully demonstrated the fundamental synaptic properties of the device, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and short-term plasticity (STP) to long-term plasticity (LTP) conversion. Our findings offer a promising approach for advancing the development of visible light optoelectronic synaptic transistors for next-generation neuromorphic computing systems.

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Section: Results and Discussionmentioning

confidence: 99%

Boosting the Visible Light Optoelectronic Synaptic Characteristics of Solution-Processed IGZO Transistors via Vertically Diffused Cd Dopants

Jeong,

Park,

Jeong

et al. 2023

ACS Appl. Electron. Mater.

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“…Different neuromorphic devices can be designed to realize light absorption for the recognition of different colors, as shown in Figure 5 f [ 115 , 116 , 121 , 122 ]. Different visual functions can be successfully demonstrated, such as visual information learning/memory, image preprocessing, and color pattern recognition [ 27 , 79 , 116 , 117 ].…”

Section: Neuromorphic Applicationsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Metal-Oxide Heterojunction: From Material Process to Neuromorphic Applications

Diao,

Zhang,

et al. 2023

Sensors

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As technologies like the Internet, artificial intelligence, and big data evolve at a rapid pace, computer architecture is transitioning from compute-intensive to memory-intensive. However, traditional von Neumann architectures encounter bottlenecks in addressing modern computational challenges. The emulation of the behaviors of a synapse at the device level by ionic/electronic devices has shown promising potential in future neural-inspired and compact artificial intelligence systems. To address these issues, this review thoroughly investigates the recent progress in metal-oxide heterostructures for neuromorphic applications. These heterostructures not only offer low power consumption and high stability but also possess optimized electrical characteristics via interface engineering. The paper first outlines various synthesis methods for metal oxides and then summarizes the neuromorphic devices using these materials and their heterostructures. More importantly, we review the emerging multifunctional applications, including neuromorphic vision, touch, and pain systems. Finally, we summarize the future prospects of neuromorphic devices with metal-oxide heterostructures and list the current challenges while offering potential solutions. This review provides insights into the design and construction of metal-oxide devices and their applications for neuromorphic systems.

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“…For structural design, printed TFTs also showed advantages in the fabrication of multilayer structural stacking, including the patterning design of semiconductor layers and the accurate coverage of patterned source/drain electrodes [29]. Therefore, the circular arc electrode structure can be explored to break the traditional rectangular symmetry structure by printing technology in TFT devices.…”

Section: Introductionmentioning

confidence: 99%

Effect of Channel Shape on Performance of Printed Indium Gallium Zinc Oxide Thin-Film Transistors

Yan,

Li,

Zhang

et al. 2023

Micromachines

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Printing technology will improve the complexity and material waste of traditional deposition and lithography processes in device fabrication. In particular, the printing process can effectively control the functional layer stacking and channel shape in thin-film transistor (TFT) devices. We prepared the patterning indium gallium zinc oxide (IGZO) semiconductor layer with Ga, In, and Zn molar ratios of 1:2:7 on Si/SiO2 substrates. And the patterning source and drain electrodes were printed on the surface of semiconductor layers to construct a TFT device with the top contact and bottom gate structures. To overcome the problem of uniform distribution of applied voltages between electrode centers and edges, we investigated whether the circular arc channel could improve the carrier regulation ability under the field effect in printed TFTs compared with a traditional structure of rectangular symmetry and a rectangular groove channel. The drain current value of the IGZO TFT with a circular arc channel pattern was significantly enhanced compared to that of a TFT with rectangular symmetric source/drain electrodes under the corresponding drain–source voltage and gate voltage. The field effect properties of the device were obviously improved by introducing the arc-shaped channel structure.

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75 kbit printed indium oxide (IO)/indium gallium zinc oxide (IGZO) heterojunction photoelectric synaptic transistor arrays for an artificial visual memory system

Abstract: With the advancement of neuromorphic electronics, the design and fabrication of large-scale and cost-effective photoelectric synaptic transistors have received much attention. Herein, we firstly report the largest (75 kbit, i.e.,...

Cited by 8 publications

References 55 publications

Boosting the Visible Light Optoelectronic Synaptic Characteristics of Solution-Processed IGZO Transistors via Vertically Diffused Cd Dopants

Boosting the Visible Light Optoelectronic Synaptic Characteristics of Solution-Processed IGZO Transistors via Vertically Diffused Cd Dopants

Metal-Oxide Heterojunction: From Material Process to Neuromorphic Applications

Effect of Channel Shape on Performance of Printed Indium Gallium Zinc Oxide Thin-Film Transistors

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