8-band<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="bold">k</mml:mi><mml:mo>.</mml:mo><mml:mi mathvariant="bold">p</mml:mi></mml:mrow></mml:math>modeling of the quantum confined Stark effect in Ge quantum wells on Si substrates

Paul, Douglas J.

doi:10.1103/physrevb.77.155323

Cited by 83 publications

(39 citation statements)

References 27 publications

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“…The same technique also showed good agreement with experimental absorption of Ge/SiGe MQW structures grown on graded buffer [34] and its dependence with light polarization [35]. k.p modeling has been used to calculate the direct gap absorption of compressively strained Ge QW [36,37]. The calculated absorption spectra also provide good agreement with experimental results, and allow a number of predictions of the absorption coefficient for different quantum well widths, electric fields, and strain levels.…”

Section: Direct Gap Related Optical Transitions In Ge/sige Qw: Growthsupporting

confidence: 62%

“…The calculated absorption spectra also provide good agreement with experimental results, and allow a number of predictions of the absorption coefficient for different quantum well widths, electric fields, and strain levels. It is also shown in reference [36] that some of the experimental results in the literature require tensile strained substrates to produce agreement with the theoretical calculations which has been confirmed experimentally [24].…”

Section: Direct Gap Related Optical Transitions In Ge/sige Qw: Growthsupporting

confidence: 57%

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Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Marris‐Morini¹,

Chaisakul²,

Rouifed³

et al. 2013

Nanophotonics

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Despite being an indirect bandgap material, germanium (Ge) recently appeared as a material of choice for low power consumption optical link on silicon. Thanks to a low energy difference between direct and indirect energy bandgap, optical transitions around the direct gap can be used to achieve strong electroabsorption or photodetection in a material already used in microelectronics circuits. However, many challenges have to be addressed such as the growth of germanium-rich structures on silicon or the modeling of these structures around both direct and indirect bandgaps. This paper will explore recent achievements in Ge/SiGe quantum wells structures. Quantum confined Stark effect has been studied for different quantum well designs and light polarization. Both absorption and phase variations have been characterized and will be reported. Carrier recombination processes is also an intense research topic, in order to evaluate the competition between direct and indirect band gap emission as a function of temperature. Main results and conclusion will be introduced. Finally, high performance photonic devices (modulator and photodetector) that have already been demonstrated will be presented. At the end the challenges faced by Ge/SiGe QW as a new photonic platform will be presented.

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Section: Direct Gap Related Optical Transitions In Ge/sige Qw: Growthsupporting

confidence: 62%

Section: Direct Gap Related Optical Transitions In Ge/sige Qw: Growthsupporting

confidence: 57%

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Marris‐Morini¹,

Chaisakul²,

Rouifed³

et al. 2013

Nanophotonics

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“…This approach has the potential to reduce the lasing thresholds in strained Ge lasers [6], compared to the optically and electrically pumped lasers previously demonstrated with low levels of tensile strain [7,8]. The theoretical transition from indirect to direct bandgap is dependant on the choice of deformation potentials [1,9], but is generally considered to be at ∼ 2 % biaxial strain.…”

Section: Introductionmentioning

confidence: 99%

“…With a direct bandgap only ∼ 140 meV above the indirect valley [1], Ge has the potential to be an active CMOS compatible optical material [5]. Tensile strain has been demonstrated to decrease the difference between the direct and indirect bandgaps, enhancing the poor radiative recombination efficiency of the material by increasing the direct bandgap contribution.…”

Section: Introductionmentioning

confidence: 99%

“…There has been significant interest in materials which are compatible with silicon foundry manufacture, such as strained Ge, that can be integrated into Si technology to allow expansion into new markets, such as Si photonics in the near-infrared (NIR) [1] and now the mid-infrared (MIR) [2,3,4] parts of the electromagnetic spectrum. With a direct bandgap only ∼ 140 meV above the indirect valley [1], Ge has the potential to be an active CMOS compatible optical material [5].…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Ge micro-cavities with in-plane tensile strains above 2 %

Millar¹,

Gallacher²,

Frigerio³

et al. 2016

Opt. Express

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Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon nitride stressor layers. Photoluminescence measurements demonstrate emission at wavelengths ≥ 2.3 μm, and the highest strained samples demonstrate in-plane, tensile strains of > 2 %, as measured by Raman spectroscopy. Strain analysis of the micro-disk structures demonstrate that shear strains are present in circular cavities, which can detrimentally effect the carrier concentration for direct band transitions. The advantages and disadvantages of each type of proposed cavity structure are discussed.

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Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

Jirauschek

Riesch

Tzenov

2019

Advcd Theory and Sims

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Due to their intuitiveness, flexibility, and relative numerical efficiency, the macroscopic Maxwell-Bloch (MB) equations are a widely used semiclassical and semi-phenomenological model to describe optical propagation and coherent light-matter interaction in media consisting of discrete-level quantum systems. This review focuses on the application of this model to advanced optoelectronic devices, such as quantum cascade and quantum dot lasers. The Bloch equations are here treated as a density matrix model for driven quantum systems with two or multiple discrete energy levels, where dissipation is included by Lindblad terms. Furthermore, the 1D MB equations for semiconductor waveguide structures and optical fibers are rigorously derived. Special analytical solutions and suitable numerical methods are presented. Due to the importance of the MB equations in computational electrodynamics, an emphasis is placed on the comparison of different numerical schemes, both with and without the rotating wave approximation. The implementation of additional effects which can become relevant in semiconductor structures, such as spatial hole burning, inhomogeneous broadening, and local-field corrections, is discussed. Finally, links to microscopic models and suitable extensions of the Lindblad formalism are briefly addressed. of a lower bandgap material than the adjacent layers, which restricts the free electron motion in that layer to the in-plane directions and gives rise to quantized energy states in growth direction. As a consequence of the further restriction of the energy spectrum and the even stronger carrier localization, additional improvement can be expected from 2D or 3D confinement, resulting in quantum wire/dash and quantum dot (QD) structures, respectively. Indeed, QD [1][2][3] and quantum dash [4] lasers and laser amplifiers have been shown to exhibit excellent characteristics. In Figure 1, the formation of quantized states in quantum wells, wires, and dots is schematically illustrated. The term quantum dash refers to an elongated nanostructure, that is, some kind of short quantum wire. By contrast, the term nanowire does not necessarily indicate strong quantum confinement. For example, in nanowire lasers, the nanowire geometry typically serves as a single-mode optical waveguide resonator, while the active region is based on a heterostructure or quantum well, as in a conventional laser diode. [5,6] Semiconductor optoelectronic devices usually rely on electron-hole recombination, that is, optical transitions between conduction and valence band states. The associated resonance wavelength is largely determined by the semiconductor bandgap, which establishes a lower bound on the transition energy. Thus, the coverage of a certain spectral region depends on the existence of suitable semiconductor materials, which for example restricts the availability of practical optoelectronic sources and detectors in the mid-infrared and terahertz regions. An alternative concept is based on intersubband devices, which employ so-called i...

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8-bandk.pmodeling of the quantum confined Stark effect in Ge quantum wells on Si substrates

Cited by 83 publications

References 27 publications

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Analysis of Ge micro-cavities with in-plane tensile strains above 2 %

Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

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