8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band

Caliman, A.; Mereuta, A.; Suruceanu, G.; Яковлев, В.; Sirbu, Alexei; Kapon, E.

doi:10.1364/oe.19.016996

Cited by 61 publications

(27 citation statements)

References 10 publications

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“…Besides fibre-optic communications, this spectral range presents increasing interest in other fields of optics applications like gas sensors, free-space communications, biomedical, Raman optical amplifiers, and so forth. In recent years, the performance of 1310-nm and 1550-nm VCSELs has been considerably improved by the introduction of InAlGaAs QWs and tunnel junction injection, resulting in fundamental mode output close to 10 mW of wafer-fused VCSELs with AlGaAs/GaAs distributed Bragg reflectors (DBRs) [6]. Although emission in the mW range is sufficient for an important part of the mentioned applications, there is a number of emerging novel applications, such as in 1300-nm lasers for frequency doubled 650-nm high-power red lasers applied in laser displays [7] and 1300-1600-nm optical pumping of Raman amplifiers [8] at high output power levels in the range of several watts.…”

Section: Introductionmentioning

confidence: 99%

Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands

Sirbu

Volet

Mereuta

et al. 2011

Advances in Optical Technologies

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1300-nm, 1550-nm, and 1480-nm wavelength, optically pumped VECSELs based on wafer-fused InAlGaAs/InP-AlGaAs/GaAs gain mirrors with intracavity diamond heat spreaders are described. These devices demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with 5 groups of quantum wells shows CW output power of 2.7 W from 180 μm apertures in both the 1300-nm and the 1550-nm bands. Devices with 3 groups of quantum wells emitting at 1480 nm and with the same aperture size show CW output of 4.8 W. These VECSELs emit a high-quality beam with beam parameter below 1.6 allowing reaching a coupling efficiency as high as 70% into a single-mode fiber. Maximum value of output power of 6.6 W was reached for 1300 nm wavelength devices with 290 μm aperture size. Based on these VECSELs, second harmonic emission at 650 nm wavelength with a record output of 3 W and Raman fiber lasers with 0.5 W emission at 1600 nm have been demonstrated.

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Section: Introductionmentioning

confidence: 99%

Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands

Sirbu

Volet

Mereuta

et al. 2011

Advances in Optical Technologies

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“…As predicted from simulations, 6 mW of single-mode power is obtained and single-mode operation, with a suppression of higher order transverse modes >30 dB, is obtained at all currents. The 6.5 [33] differential resistance of the VCSEL is 80 and the beam divergence (full-width at half maximum) was measured to be 12 • .…”

Section: A Specific Examplementioning

confidence: 99%

Single-Mode VCSELs

Larsson

Gustavsson

2012

Springer Series in Optical Sciences

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The only active transverse mode in a truly single-mode VCSEL is the fundamental mode with a near Gaussian field distribution. A single-mode VCSEL produces a light beam of higher spectral purity, higher degree of coherence and lower divergence than a multimode VCSEL and the beam can be more precisely shaped and focused to a smaller spot. Such beam properties are required in many applications. In this chapter, after discussing applications of single-mode VCSELs, we introduce the basics of fields and modes in VCSELs and review designs implemented for singlemode emission from VCSELs in different materials and at different wavelengths. This includes VCSELs that are inherently single-mode as well as inherently multimode VCSELs where higher-order modes are suppressed by mode selective gain or loss. In each case we present the current state-of-the-art and discuss pros and cons. At the end, a specific example with experimental results is provided and, as a summary, the most promising designs based on current technologies are identified. IntroductionThe vertical-cavity surface-emitting laser (VCSEL) is an attractive light source for an expanding range of applications. Due to low cost manufacturing, low power consumption, simplified packaging, attractive beam properties (circular and low divergence beam) and excellent high-speed modulation characteristics at low currents, it has replaced the edge-emitting laser in short-reach optical communication links

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“…Such a VCSEL structure [ Fig. 2(a)] has been pro− posed by Caliman et al [18] (line 38). In the 7−μm diameter InAlGaAs/InP VCSEL emitting radiation of the 1566 nm, they received fundamental−mode RT output of 6.5 mW, which is the record value in this wavelength range, and even 8 mW at 0°C.…”

Section: Uniform Current Injection Into Vcsel Active Regionmentioning

confidence: 99%

VCSEL structures used to suppress higher-order transverse modes

Nakwaski

2011

Opto-Electronics Review

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Currently unwanted excitation of higher-order transverse modes is the most serious drawback of vertical-cavity surface-emitting diode lasers (VCSELs) limiting their possible applications. In the present paper, various methods used to suppress those modes are described and their effectiveness is compared. It is well known that, because of a nearly uniform current injection into their active regions, small-aperture VCSELs without any modification offer quite high single-fundamental-mode (SFM) output. However, their series resistance is often too high, which aggravates their high-modulation performance. Similarly uniform current injection may be also achieved with the aid of a tunnelling junction. Generally, methods suppressing higher-order modes take advantage of higher optical gain within the central part of the active region, higher radiation losses outside this region and/or higher central mirror reflectivity. Currently, applications of a tunnel junction, an impurity-induced disordering or an inverted shallow surface relief seem to be the simplest and the most effective methods. The deep etched holey structure or the ARROW structure enable obtaining similar single-mode output powers but they may be used in special cases only because of their complex technology. Photonic crystals may probably enable more advanced mechanisms of suppressing higher-order modes in future because currently their application seems to be still far from being optimised.

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8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band

Cited by 61 publications

References 10 publications

Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands

Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands

Single-Mode VCSELs

VCSEL structures used to suppress higher-order transverse modes

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