8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam Exposure

Emoto, Fumiaki; Gamo, Kenji; Namba, Susumu; Samoto, Norihiko; Shimizu, Ryuichi

doi:10.1143/jjap.24.l809

Cited by 27 publications

(6 citation statements)

References 5 publications

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“…The range of influence of such scattered electrons was typically of the order of tens of nanometers away from the zone of exposure [56]. The scattered electrons also included back-scattered ones, enhancing the influence of the irradiation in the zones near the exposed area [57][58][59], and a higher e-beam dose led to a wider area of influence around the exposed area [60]. We exploited these effects for further investigation of the system with an e-beam dose of 3000 μC cm −2 .…”

Section: Phenomenonmentioning

confidence: 99%

Self-organization of random copolymers to nanopatterns by localized e-beam dosing

et al. 2021

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Strategic electron beam (e-beam) irradiation on the surface of an ultrathin (<100 nm) film of polystyrene–poly(methyl methacrylate) (PS-PMMA) random copolymer followed by solvent annealing stimulates a special variety of dewetting, leading to large-area hierarchical nanoscale patterns. For this purpose, initially, a negative (positive) tone of resist PS (PMMA) under weak e-beam exposure is exploited to produce an array of sites composed of cross-linked PS (chain-scissioned PMMA). Subsequently, annealing with the help of a developer solvent engenders dewetted patterns in the exposed zones where PMMA blocks are confined by the blocks of cross-linked PS. The e-beam dosage was systematically varied from 180 μC cm−2 to 10 000 μC cm−2 to explore the tone reversal behavior of PMMA on the dewetted patterns. Remarkably, at relatively higher e-beam dosing, both PMMA and PS blocks act as negative tones in the exposed zone. In contrast, the chain scission of PMMA in the periphery of the exposed regions due to scattered secondary electrons caused confined dewetting upon solvent annealing. Such occurrences eventually lead to pattern miniaturization an order of magnitude greater than with conventional thermal or solvent vapor annealed dewetting. Selective removal of PMMA blocks of RCP using a suitable solvent provided an additional 50% reduction in the size of the dewetted features.

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Section: Phenomenonmentioning

confidence: 99%

Self-organization of random copolymers to nanopatterns by localized e-beam dosing

et al. 2021

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“…Figure 2 shows an example of fine patterns delineated in 230 nm thick PMMA spin-coated on Si wafer by using a 50 keV electron beam (Emoto et al 1985). This pattern is 8 nm wide, 100 nm spaced PMMA resist line patterns and is almost at the limit of electron beam lithography.…”

Section: Exposure Characteristicsmentioning

confidence: 99%

“…The in-situ development is also possible using ion beams. For the exposure using 50keVHe ion beams, for example, 400 nm thick PMMA resist is developed at a dose of about 25J/cm 2 (Gamo et al 1988), which is much higher than the dose required for KrF excimer laser.…”

Section: Nanolithography For Vlsi and Ulsimentioning

confidence: 99%

Nanolithography for VLSI and ULSI

Namba

1989

Laser Part. Beams

Self Cite

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Lithography techniques hold the key to achieving ultra large-scale integration (ULSI) and they have been a major research subject. For fabrication of ULSI devices, a quarter micron or smaller pattern delineation with nanometer scale accuracy is required. Various techniques using electron, ion and photon beams have been investigated to fulfill these requirements. The present paper discusses the characteristics of several key lithography techniques and their limitations.

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“…5,6 Positive resists generally have high resolution due to the chain scission mechanism and the subsequent development process in which regions consisting of low molecular weight resins are dissolved in organic developers. However, lithography resolution not only depends on the beam size itself and the secondary electron scattering, but also on the resolution of the resist.…”

Section: Introductionmentioning

confidence: 99%

High resolution organic resists for charged particle lithography

Ochiai

Manako

Fujita

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Exposure of resist with electron or ion beams is a common nanolithography technology which is used to fabricate electronic devices and microstructures. The resolution mainly depends on the beam size and the resolution of the resist. We have developed two new high resolution organic resists, which are calixarene derivatives. 50 keV electron beams and 260 keV Be 2ϩ ion beams were used to expose the resist, and 10 nm resolution was achieved with the Gaussian electron beam. The electron beam sensitivities of the two resists were 7 and 0.7 mC/cm 2 . By using them, we produced 10-nm-order resolution patterns, which we exposed with a Gaussian electron beam. We also achieved 10-nm-level resolution by using a low molecular weight ͑Mwϭ1100͒ polystyrene resist, almost the same Mw as that of the calixarene. The resolution of the polystyrene resist improved as lower molecular weights were used. Therefore, the resist resolution depends on the molecular weight or molecular size.

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8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam Exposure

Cited by 27 publications

References 5 publications

Self-organization of random copolymers to nanopatterns by localized e-beam dosing

Self-organization of random copolymers to nanopatterns by localized e-beam dosing

Nanolithography for VLSI and ULSI

High resolution organic resists for charged particle lithography

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