82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency

Ahmed, Omar; Mukherjee, A.; Liang, Wen-Feng; Zhang, Yaxin; Sakalas, P.; Schröter, M.

doi:10.1109/bcicts45179.2019.8972765

Cited by 3 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The discrepancy between measurement and simulation at the midband is attributed to extra passive component losses in the LO and RF MNs. The LO-to-RF isolation is determined based on the I summarizes and compares the performance of prior published W -band SiGe-HBT active up-conversion mixers [8], [9], [10], [11], [12].…”

Section: Measurement Setups and Resultsmentioning

confidence: 99%

“…For instance, the number of required up-conversion mixers directly scales with the number of TX channels in a phased array, necessitating the minimization of mixer power consumption while ensuring sufficient conversion gain and linearity performance for higher-order modulation schemes. To date, there have only been a limited number of SiGe active up-conversion mixers [8], [9], [10], [11], [12] reported with marginal OP 1dB and considerably higher power consumption.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Low-Power W-Band SiGe-HBT Double-Balanced Up-Conversion Mixer With an Integrated Second-Order IF Low-Pass Filter

Vardarli,

Chen,

Schröter

2024

IEEE Microw. Wireless Tech. Lett.

View full text Add to dashboard Cite

A low-power W -band (75-110 GHz) doublebalanced up-conversion mixer using a 0.13 µm SiGe:C BiCMOS technology with f T / f max = 250/370 GHz is presented. The mixer includes ON-chip transformer baluns at the LO and RF ports for on-wafer characterization. At 91.3 GHz, the active mixer achieves a single sideband (SSB) power conversion gain of 4.1 dB with a 3-dB RF bandwidth (BW) of 30 GHz from 78.1 to 108.3 GHz, covering almost the entire W -band. The linearity performance, characterized by OP 1dB and P sat , is 0.6 and 1.8 dBm, respectively while consuming only 11 mW from a 1.8 V supply. Moreover, a second-order IF LC low-pass filter (LPF) with a cutoff frequency of 1.4 GHz is integrated to provide an additional spurious suppression of ∼12 and ∼19 dB at the second and third harmonic of the fundamental IF (i.e., 1.25 GHz). The overall chip area, including the IF LPF is 990 × 540 µm (0.53 mm 2 ). To the best of authors' knowledge, the active up-conversion mixer achieves the lowest power consumption along with the highest OP 1dB / P sat and 3-dB RF BW reported among all prior published W -band SiGe-HBT up-conversion mixers.

show abstract

Section: Measurement Setups and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Low-Power W-Band SiGe-HBT Double-Balanced Up-Conversion Mixer With an Integrated Second-Order IF Low-Pass Filter

Vardarli,

Chen,

Schröter

2024

IEEE Microw. Wireless Tech. Lett.

View full text Add to dashboard Cite

show abstract

“…Their verification beyond the device level has been pursued by designing basic HF circuit building blocks with a relatively low device count and the following goals in mind: i) Verification of models under a variety of realistic circuit operating conditions; ii) Identification of model shortcomings as early as possible in a process development stage; iii) Performance evaluation of the process technology in terms of its suitability for target applications. Several benchmark circuits have been designed [40]- [43]. The results of two circuits will be briefly discussed below.…”

Section: E Benchmark Circuit Blocks For Model Verificationmentioning

confidence: 99%