850 GHz Receiver and Transmitter Front-Ends Using InP HEMT

Leong, K.M.K.H.; Mei, X.B.; Yoshida, W.; Zamora, Alexis; Padilla, Jose G.; Gorospe, B.; Nguyen, Khanh; Deal, W.R.

doi:10.1109/tthz.2017.2710632

Cited by 65 publications

(24 citation statements)

References 15 publications

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“…Since the first report of extrapolated f max of InGaAs/InAlAs/InP HEMT with 35 nm gate exceeding the 1 THz limit [76], similar parameters were achieved for a 20 nm metamorphic HEMT technology [77] and the f max of 1.3 THz for an extended drain-side recess structure in 75 nm gate InAlAs/InGaAs HEMTs [78]. Although currently available just in a few places worldwide, such technologies are starting to be named as Terahertz Monolithic Integrated Circuits (TMICs) and, by now, have proven to be able to produce efficient frequency multipliers for 500 GHz [79] or 670 GHz [80], mixers for 600 GHz [81], low noise amplifiers for 600 GHz band [82][83][84], and transmitters and receivers for 850 GHz [85] with the record report of achieved amplification up to 8 dB at 1 THz [86].…”

Section: High Electron Mobility Transistor-based Sourcesmentioning

confidence: 99%

Roadmap of Terahertz Imaging 2021

Valušis

Lisauskas

Yuan

et al. 2021

Sensors

191

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In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

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Section: High Electron Mobility Transistor-based Sourcesmentioning

confidence: 99%

Roadmap of Terahertz Imaging 2021

Valušis

Lisauskas

Yuan

et al. 2021

Sensors

191

View full text Add to dashboard Cite

show abstract

“…It can be seen that all the three technologies can provide output powers up to the milliwatt (mW) threshold in the 300 GHz-band (∼ 275-325 GHz [39]), while both UTC-PD and RTD-based emitters have also demonstrated to work well above 600 GHz, and above 1 THz with associated RF power of up to few microwatt (µW). Indeed, TMICs oscil- lators have shown to work at ∼ 300 GHz in the fundamental mode [40], ∼ 430 GHz in the second harmonic [41], and ∼ 540 GHz in the third harmonic [42], and with operation frequencies of 1 THz and mW output powers in the 0.3-0.9 THz range only enabled by extremely complex Tx designs, including frequency multiplier chains, push-push operation, sub-harmonic amplification stages, and array configurations [43]- [48], while RTD oscillators do not require any of these and are characterised by uncomplex circuit topologies, which drastically reduces production cost and increases integrability. Fig.…”

Section: Introductionmentioning

confidence: 99%

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Cimbri

Wang

Al-Khalidi

et al. 2022

IEEE Trans. THz Sci. Technol.

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Resonant tunnelling diode (RTD) technology is emerging as one of the promising semiconductor-based solidstate technologies for terahertz (THz) wireless communications. This paper provides a review of the state-of-the-art, with a focus on the THz RTD oscillator, which is the key component of RTDbased THz transmitters and coherent receivers. A brief summary on the device principle of operation, technology, modelling, as well as an overview of oscillator design and implementation approaches for THz emitters, is provided. A new insight to device evaluation and to the reported oscillator performance levels is also given, together with brief remarks on RTD-based THz detectors. Thereafter, an overview of the reported wireless links which utilise an RTD in either transmission or reception, or in both roles, is given. Highlight results include the record single-channel wireless data rate of 56 Gb/s employing an all RTD-based transceiver, which demonstrates the potential of the technology for future short-range communications. The paper concludes with a discussion of the current technical challenges and possible strategies for future progress.

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“…Currently, a better option may then be to use indium-phosphide (InP) technology for the highest frequency parts, combined with a silicon complementary metal-oxide-semiconductor-driven baseband circuit. Amplifiers and mixers at 800 GHz have been demonstrated in 25-nm InP high-electron-mobility transistor (HEMT) technology with fmax of 1.5 THz [189]. When 5-nm SiGe technology becomes available, the level of integration will be higher, resulting in reduced production costs.…”

Section: Rf Transceiver Challenges and Possibilitiesmentioning

confidence: 99%

6G Wireless Systems: Vision, Requirements, Challenges, Insights, and Opportunities

Shafi²,

et al. 2021

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Mobile communications have been undergoing a generational change every ten years or so. However, the time difference between the so-called "G's" is also decreasing.While fifth-generation (5G) systems are becoming a commercial reality, there is already significant interest in systems beyond 5G, which we refer to as the sixth generation (6G) of wireless systems. In contrast to the already published papers on the topic, we take a top-down approach to 6G. More precisely, we present a holistic discussion of 6G systems beginning with lifestyle and societal changes driving the need for next-generation networks. This is followed by a discussion into the technical requirements needed to enable 6G applications, based on which we dissect key challenges and possibilities for practically realizable system solutions across all layers of the Open Systems Interconnection stack (i.e., from applications to the physical layer). Since many of the 6G applications

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850 GHz Receiver and Transmitter Front-Ends Using InP HEMT

Cited by 65 publications

References 15 publications

Roadmap of Terahertz Imaging 2021

Roadmap of Terahertz Imaging 2021

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

6G Wireless Systems: Vision, Requirements, Challenges, Insights, and Opportunities

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