860 GHz rate asymmetric colliding pulse modelocked diode lasers

Sub-picosecond pulse and terahertz optical frequency comb generation by monolithically integrated linear mode-locked laser

“…Alternatively, a passively mode-locked laser can be designed in such a way that SAs are placed at some certain positions within the resonator to support two or more pulses meeting in the absorbers that is the colliding-pulse mode locking scheme [7][8][9][10].…”

Mode-locked laser with pulse interleavers in a monolithic photonic integrated circuit for millimeter wave and terahertz carrier generation

“…Repetition rates at 60 GHz [6], 100 GHz [7], 192 GHz [8], 237 GHz [9], 240 GHz [10], 375 GHz [11], 377 GHz [12], and 860 GHz [13] were realized. These demonstrations used cleaved facets as reflectors to define the cavity [6,[8][9][10][11][12][13], which is not an accurate process, causing uncertainty in the cavity length. Recently, on-chip Multimode Interference Reflectors (MIR) [14] were demonstrated [7] to provide more accurate design.…”

On-chip mode-locked laser diode structure using multimode interference reflectors

“…2, is on the right end of the active waveguide. This location was intended to be 600 μm away from the right-hand side MIR, to place the SA at L res ∕4 and set the device operation at its fourth harmonic (72 GHz) [15]. Further details of the fabrication process belong to the SMART_Photonics InP generic foundry [16].…”