94 GHz power amplifier using PHEMT technology

Marosi, L.; Sholley, M.; Goel, J.; Faris, A.I.; Siddiqui, M.; Stones, D.I.; Tan, K. H.

doi:10.1109/mwsym.1995.406281

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…This need has led to interest in the development of W-band high power, high efficiency amplifiers, which are currently realized almost exclusively in gallium arsenide (GaAs) and indium phosphide (InP) material systems due to their high transition frequency (Ft) performance [32], [33]. However, use of these devices has resulted in larger device peripheries for a given specified output power, more combining structures, higher combining losses, and lower power densities.…”

Section: Wwwintechopencommentioning

confidence: 99%

The Present and Future Trends in High Power Microwave and Millimeter Wave Technologies

Azam¹,

Wahab²

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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Section: Wwwintechopencommentioning

confidence: 99%

The Present and Future Trends in High Power Microwave and Millimeter Wave Technologies

Azam¹,

Wahab²

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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“…Power generation at millimeter-wave frequencies is still an open problem and a subject of intense research [1]- [18]. Signal power generation and amplification is required in communications, imaging, and radar systems, which means that practically all millimeter-wave systems suffer from low power levels and poor efficiency for power generation.…”

Section: Introductionmentioning

confidence: 99%

Power Amplifier Design for E-band Wireless System Communications

Hadziabdic

Krozer

Johansen

2008

2008 38th European Microwave Conference

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Abstract-E-band wireless communications will become important as the microwave backhaul for high-speed data transmission. One of the most critical components is the front-end power amplifier in this system. The paper analyzes different technologies with potential in the E-band frequency range and present a power amplifier design satisfying the E-band system specifications. The designed power amplifier achieves a maximum output power of > 20 dBm with a state-of-the-art power-added efficiency of 15%. The power is realized using InP DHBT technology. To the best of our knowledge it is the highest output power and efficiency reported for an InP HBT power amplifier in this frequency range. The predicted power-added efficiency is higher than that of power amplifiers based on SiGe HBT and GaAs pHEMT technologies. The design shows the capabilities of InP DHBT for power amplifier applications as an alternative to HEMT based technologies in the millimeter-wave frequency range.

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A 94-GHz 0.35-W power amplifier module

Huang

Wang

et al. 1997

IEEE Trans. Microwave Theory Techn.

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94 GHz power amplifier using PHEMT technology

Cited by 4 publications

References 3 publications

The Present and Future Trends in High Power Microwave and Millimeter Wave Technologies

The Present and Future Trends in High Power Microwave and Millimeter Wave Technologies

Power Amplifier Design for E-band Wireless System Communications

A 94-GHz 0.35-W power amplifier module

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