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Abstmct-We have successfully fabricated state-of-the-art low-noise planar doped pseudomorphic (PM) InCaAs high electron mobility transistors (HEMT's) with a gate length of 0.1 p m for W-band operation. These devices feature a multiple-finger layout with air bridges interconnecting the sources to reduce gate resistance. The device exhibits a minimum noise figure of 2.5 dB with an associated gain of 4.7 dB at 92.5 GHz. This result is the best reported for any transistor fabricated on GaAs substrates at this frequency.

We report an InP HEMT MMIC LNA incorporating dry etched backside ground plane vias with an on-wafer measured peak gain of 9.6 dB at 190 GHz. The 2-stage balanced LNA exhibited over 7 dB gain across a 30 GHz bandwidth. The high gain and high operating frequency of the amplifier is attributed to the lower source inductance provided by the 25 pm dry etched ground vias, the 80 nm T-gate, and the graded Ino,,Gao,oAs channel HEMT.

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