A 183 GHz low noise amplifier module for the conical-scanning microwave imager sounder (CMIS) program

2010 IEEE International Reliability Physics Symposium

Leung

Biedenbender

et al. 2010

Self Cite

Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature lifetesting. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at T ambient of 280 °C projects the median-time-to-failure exceeding 1x10 6 hours at T channel of 125 °C. This result indicates that the promising initial reliability performance was achieved on Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates.

Section: Introductionmentioning

confidence: 99%

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

2010 IEEE International Reliability Physics Symposium

Leung

Biedenbender

et al. 2010

Self Cite

“…InGaAsiInAIAdInP microwave monolithic integrated circuits (MMICs) with high electron mobility transistors (HEMTs) have demonstrated supenor microwave and millimeter wave performance at 44 GHz [I], 94 GHz [Z-31, 118 GHz F4-51, 155 GHz [6], and 183 GHz [7][8]. The further qualification of InGaAslInAIAshP MMIC technology in the categories of hgh-temperature reliability, Gammdneutron dose radiation, RF survivability, electrostatic discharge (ESD) test, and hydrogen rcliability demonstrates the readiness of InGaAs/lnAlAs/lrP MMIC technology for the spaceimilitary applications in Northrop G " a n Space Technology [9].…”

Section: Introductiodmentioning

confidence: 99%

Tradeoff of DC/RF performance versus reliability in 0.1 μm InP HEMTs

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004.

Grundbacher

Leung

et al.

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The tradeoff of DCBF performance versus reliability has been explored on 0.1 pm InP HEMTs. The tradeoff between performance and reliability shows the dependence on the process techniques.While higher performance could be achieved with certain process techniques, the reliability performance is adversely affected. Nevertheless, all the process variations explored here exhibit activation energy of approximately 1.9 eV. However, the time-to-failure (TTF) at lifetest temperatures of 230°C and 250°C and median-time-to-failure (MTTF) at junction temperature of 125°C depend on the process techniques. The resuits are beneficial for balancing performance versus reliability through the adjustment of the processing technique. I. IntroductiodInGaAsiInAIAdInP microwave monolithic integrated circuits (MMICs) with high electron mobility transistors (HEMTs) have demonstrated supenor microwave and millimeter wave performance at 44 GHz [I], 94 GHz [Z-31, 118 GHz F4-51, 155 GHz [6], and 183 GHz [7-8]. The further qualification of InGaAslInAIAshP MMIC technology in the categories of hgh-temperature reliability, Gammdneutron dose radiation, RF survivability, electrostatic discharge (ESD) test, and hydrogen rcliability demonstrates the readiness of InGaAs/lnAlAs/lrP MMIC technology for the spaceimilitary applications in Northrop G " a n Space Technology [9]. Moreover, high reliability performance has been demonstrated on 0.07 prn InP HEMT MMICs [lo] and metamorphic HEMTs (MHEMTs) [I 1, 121, While MMICs with excellent RF performance have been demonstrated, they might not exhibit the best reIiability pcrformance. Accordingly, it is essential to understand the correlation of DC/RF performance with reliability in InP HEMTs. In 1997, Y. C. Chcn et. al. [13] studied the effect of recess optimization on the power performance in InP HEMT power amplifiers. It was observed that there is tradeoff between targeted recess depth and DC/power performance. Nevertheless, there is no available information on the effect of recess depth variation on reliability performance. Recently, Menozzi et. al. [ 141 reported thc effect of gate recess time on hot electron reliability. In his investigation, devices were stressed at room temperature. It was found that lhe hot electron reliability or wide-recess devices is inferior to that of devices with narrow recess. The result was attributed to the semiconductor-SiN interface being closer to the channel on the 0-7803-8595-0/oQ/S20.00 02004 FEEE wide-recess devices. Therefore, the screening provided by the high-doping capping layer is reduced [ 141. NevertheIess, the effect of gate recess time on high-temperature reliability was lacking. Recently, M . Dammann et. al. Ell] reported that the median lifetime of enhancement MHEMTs (MTTF =I. 1 xl O6 hours) is approximately one order of magnitude smaller as compared t o depletion MHEMTs (MTTF =3x107 hours). Thefaster degradation of enhancement MHEMTs as compared to depletion MHEMTs was attributed to smaller gate to channel distance andor the smaller recess length, leading ...

“…TRW has demonstrated state-of-the-art of millimeter wave performance over the frequency range of 100 GHz [l], 118 GHz [2,3], 155 GHz [4], 183 GHz [5], and 190 GHz [6,7,8] using InGaAsAnAIAshnP HEMT MMIC technology to meet the strong demand of present and future commercial and military electronic systems. With InGaAsAnAlAsAnP HEMTs becoming a preferred technology for either system performance improvement or the next generation system design, the demonstration of a robust technology for providing reliable, high performance MMICs at low cost and high yield to both the space/defense and commercia1 markets is essential.…”

Section: Introductionmentioning

confidence: 99%

High reliability of 0.1 μm InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP production process

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

Leung²,

Lai³

et al.

Self Cite

The high-reliability performance of Kband MMIC amplifiers fabricated using 0.1 pm T-gate InGaAs/InAlAs/inP HEMTs on 3-inch wafers using a high volume production process is reported. Operating at an accelerated life test condition of Vds=1.2 V and lds=150 d m m , two-stage balanced amplifiers were lifetested at threetemperatures (T1=215"C, T2=230"C and T3=250"C) in a N2 ambient. The activation energy (Ea) is as high as 2 eV, achieving a projected median-time-to-failure (MTF) > lxlOx hours at a 125°C junction temperature. MTF was determined by 3-temperature constant current stress using I AS21 I > 1.0 dB as the failure criteria. This is the first demonstration of 3-temperature high reliability 0.1 pm InGaAsDnAlAsfinP HEMT based on small-signal microwave characteristics of HEMT MMIC. This result demonstrates a robust InGaAs/InAlAsAnP HEMT production technology.