Ultralow-noise W-band pseudomorphic InGaAs HEMT's

Tan, K. H.; Dia, R.M.; Streit, D.C.; Han, A.C.; Trinh, T.Q.; Velebir, J.R.; Liu, P.H.; Lin, T.S.; Yen, H.C.; Sholley, M.; Shaw, L.

doi:10.1109/55.56482

Cited by 31 publications

(4 citation statements)

References 8 publications

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“…As we know, the InP-based HEMT's show the best noise performance [1], but it is very difficult for their fabrication processes as compared to those of GaAs-based HEMT's. This encourages t he development of GaAs-based low-noise AlGaAs/InGaAs/ GaAs pseudomorphic HEMT's in these applications [2]. However, several disadvantages still exist, for example, in the viewpoint of achieving precise control of gate recess etching and reliability for thermal stress.…”

Section: Introductionmentioning

confidence: 99%

Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

Huang

Wang

et al. 2003

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

Huang

Wang

et al. 2003

Solid-State Electronics

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“…InP-based HEMTs show the best noise performance [1], but it is very difficult for their fabrication processes as compared to those of GaAs-based HEMTs. This encourages the development of GaAs-based low-noise AlGaAs/InGaAs/GaAs pseudomorphic HEMTs in these applications [2]. However, several disadvantages still exist, for example, in the viewpoint of achieving precise control of gate recess etching and reliability for thermal stress compared to AlGaAs gated PHEMTs.…”

Section: Introductionmentioning

confidence: 99%

Super low noise InGaP gated PHEMT

Huang

Wang

Wu³

et al. 2002

IEEE Electron Device Lett.

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Very high performance InGaP/InGaAs/GaAs PHEMTs will be demonstrated. The fabricated InGaP gated PHEMTs devices with 0.25 160 m 2 and 0.25 300 m 2 of gate dimensions show 304 mA/mm and 330 mA/mm of saturation drain current at GS = 0 V, DS = 2 V, and 320 mS/mm and 302 mS/mm of extrinsic transconductances, respectively. Noise figures for 160 m and 300 m gate-width devices at 12 GHz are measured to be 0.46 dB with a 13 dB associated gain and 0.49 dB with a 12.85 dB associated gain, respectively. With such a high gain and low noise, the drain-to-gate breakdown voltage can be larger than 11 V. Standard deviation in the threshold voltage of 22 mV for 160 m gate-width devices across a 4-in wafer can be achieved using a highly selective wet recess etching process. Good thermal stability of these InGaP gated PHEMTs is also presented.

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“…The heterostructure field-effect transistors ͑HFETs͒ based on an InGaAs pseudomorphic channel have shown excellent performance at millimeterwave frequencies [1][2][3][4][5][6] due to the good electron confinement by the potential well, high current drivability, and high transconductance. Namely, device performance is enhanced substantially by increasing the indium content in the InGaAs channel.…”

Section: Introductionmentioning

confidence: 99%

Ga 0.51 In 0.49 P/In x Ga 1−x As/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy

Lin¹,

Lu²,

Chang³

1999

Journal of Applied Physics

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Recently, it was demonstrated that doped-channel field-effect-transistor ͑DCFET͒ structure has the advantages of high breakdown voltage, high current drivability, and high turn on voltage. Therefore, a series of lattice-matched and strained Ga 0.51 In 0.49 P/In x Ga 1Ϫx As/GaAs (0рxр0.22) DCFETs were studied in order to find the optimized structure. Through dc and microwave measurements, we observed that the introduction of a 150-Å-thick strained In x Ga 1Ϫx As (0.15рxр0.22) channel can enhance device performance, compared to the lattice-matched one (xϭ0). The optimized performance of transconductance (g m ), current-gain cutoff frequency ( f t ) and maximum oscillation frequency ( f max ) all occurred when indium content x was between 0.15 and 0.20 for devices with 1-m-long gate and these optimized results are comparable to those state-of-the-art results of pseudomorphic high electron mobility transistors. We also found that DCFETs are very ideal for single-voltage-supply operation. Degradation of device performance was observed for larger indium content (xϭ0.22), which is associated with strain relaxation in this highly strained channel. Experimental results showed that Ga 0.51 In 0.49 P/In x Ga 1Ϫx As/GaAs DCFETs with indium content x between 0.15 and 0.20 were very suitable for microwave high power device applications.

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Ultralow-noise W-band pseudomorphic InGaAs HEMT's

Cited by 31 publications

References 8 publications

Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

Super low noise InGaP gated PHEMT

Ga 0.51 In 0.49 P/In x Ga 1−x As/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy

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