Super low noise InGaP gated PHEMT

Abstract

Very high performance InGaP/InGaAs/GaAs PHEMTs will be demonstrated. The fabricated InGaP gated PHEMTs devices with 0.25 160 m 2 and 0.25 300 m 2 of gate dimensions show 304 mA/mm and 330 mA/mm of saturation drain current at GS = 0 V, DS = 2 V, and 320 mS/mm and 302 mS/mm of extrinsic transconductances, respectively. Noise figures for 160 m and 300 m gate-width devices at 12 GHz are measured to be 0.46 dB with a 13 dB associated gain and 0.49 dB with a 12.85 dB associated gain, respectively. With such a high gain and low noise, the drain-to-gate breakdown voltage can be larger than 11 V. Standard deviation in the threshold voltage of 22 mV for 160 m gate-width devices across a 4-in wafer can be achieved using a highly selective wet recess etching process. Good thermal stability of these InGaP gated PHEMTs is also presented.

Theoretical investigation of GaN permeable base transistors for microwave power applications

“…Note also that, even when the metal thickness is doubled, g m and f T still have values which can be adequate for microwave operation. In fact, f T decreases from 82 GHz for the smaller device down to 56 GHz for the device with the larger w f , and g m shows a similar trend; it should be noticed that the smallest device has g m = 307 mS mm −1 , a value comparable to the results obtained for conventional pHEMTs [11] and for the present generation of AlGaN/GaN HFETs [4,12,13]. We can therefore conclude that, in spite of the practical difficulty to control the base-metal thickness according to a specific scaling rule, the sensitivity to this parameter will not prevent the microwave operation of the PBT.…”

Comparative study on dc characteristics of In0.49Ga0.51P-channel heterostructure field-effect transistors with different gate metals

“…On the other hand, it is well known that, the Schottky contact plays an important role in III-V semiconductor devices. Although, In 0.49 Ga 0.51 P metal-semiconductor fieldeffect transistors (MESFETs) exhibited good electrical performances [12,13], few reports were found to discuss the effects resulting from different gate metal materials and the existence of a thin and fresh oxide layer [13,14]. In this work, a comparative study of dc characteristics and temperaturedependent performances of In 0.49 Ga 0.51 P-channel HFETs with different gate metals is demonstrated.…”

“…Hence, the collapse of channel current in HFETs based on this material can be reduced. (4) The smaller surface recombination of the In 0.49 Ga 0.51 P material causes the lower 1/f noise behaviours [12]. (5) The high etching selectivity between In 0.49 Ga 0.51 P and GaAs provides the exact gate recess process which improves the device uniformity and production yield [10].…”

Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET

“…The earliest study of HEMTs consisted of a one-dimensional analytical approach, which is not sufficient to describe the behaviour of these devices in the submicrometer regime. A number of analytical models [9][10][11] have been developed so far to characterize the 2-DEG sheet carrier concentration. But these models do not explain the behaviour of the device in the subthreshold region.…”