Comparative study on dc characteristics of In_0.49Ga_0.51P-channel heterostructure field-effect transistors with different gate metals

Abstract

DC characteristics of interesting In 0.49 Ga 0.51 P-channel heterostructure field-effect transistors (HFETs) with different gate metals, e.g., Pt, Pd and Au, have been studied and demonstrated. A very thin and fresh oxide layer is introduced to increase the gate turn-on and breakdown voltages and reduce the gate leakage current. It is found that, metal-oxidesemiconductor field-effect transistors show higher barrier height, turn-on voltage, breakdown voltage, off-state voltage, output current and transconductance than metal-semiconductor field-effect transistors. In addition, the barrier height and turn-on voltage are increased with the increasing metal work function. However, the breakdown voltage is decreased with the increasing metal work function. All studied devices show good performances of high breakdown voltage, high output drain saturation and flat and wide transconductance operation regimes. The temperature-dependent behaviours are also studied. It is known from experimental results that In 0.49 Ga 0.51 P HFETs show good potentiality in high-temperature electronics applications.

Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments

“…Recently, due to the rapid progress in epitaxial growth technologies, many novel III-V and III-nitride based devices such as photodiodes, heterojunction bipolar transistors (HBTs) [1][2][3], metal-semiconductor field-effect transistors (MESFETs) [4], pseudomorphic high electron mobility transistors (PHEMTs), and laser diodes (LD) have been fabricated and reported.…”