Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments

et al. 2007

J. Electrochem. Soc.

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In this work, the characteristics of the InGaP/GaAs heterojunction bipolar transistors with different emitter-edge-thinning thickness were systematically investigated. A stronger downward-band-bending phenomenon was observed at the edge of emitter-edgethinning intersection with the exposed base surface. This band bending induced the presence of a potential saddle point, which substantially increased the recombination rates and electron densities. In addition, the decision of emitter-edge-thinning thickness plays a key role in reducing surface recombination at the potential saddle point. As the emitter-edge-thinning thickness was selected between 100 and 200 Å, the lowest recombination rate and electron density and highest dc current gain could be obtained. Furthermore, good agreements between the theoretical analyses and experimental results were found.

Section: Resultsmentioning

confidence: 99%

Influence of Emitter-Edge-Thinning Thickness on the Heterojunction Bipolar Transistor Performance

Chen

et al. 2007

J. Electrochem. Soc.

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“…bination rate through surface states and Fermi-level pinning on the extrinsic base surface, the surface recombination current component I S becomes pronounced. 9,12 The surface Fermi level pinning near the emitter mesa edge leads to surface depletion and a strong downward bending of the bands, as shown in Fig. 3͑a͒.…”

Section: The Mechanism Of Sulfur Treatment and Ledge Passivationmentioning

confidence: 94%

Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors

Chen

Journal of Applied Physics

et al. 2007

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Specific treatments of the base surface of InGaP / GaAs heterojunction bipolar transistors are studied experimentally. The dual treatment method, based on the combination of ledge and sulfur passivation, shows better temperature-dependent characteristics including higher dc gain, lower saturation voltage, lower base-emitter junction turn on voltage, lower leakage current, lower collector and base current ideality factors n C and n B , and wider collector current operating regimes over the measured temperature range ͑300-400 K͒. Therefore, the dual surface treatment method provides promise for high-performance electronic applications.

“…[1][2][3][4][5][6] Generally, a free GaAs surface is characterized by its high surface recombination velocity and high surface state density. [1][2][3][4][5][6] Generally, a free GaAs surface is characterized by its high surface recombination velocity and high surface state density.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6] Generally, a free GaAs surface is characterized by its high surface recombination velocity and high surface state density. [1][2][3][4][5][6][7] This strongly impedes the device scaling and also degrades the device performance. [1][2][3][4][5][6][7] This strongly impedes the device scaling and also degrades the device performance.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Improved performance of a dual-passivated heterojunction bipolar transistor

Cheng

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

2007

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Articles you may be interested inStability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors Appl. Phys. Lett. 94, 063506 (2009); 10.1063/1.3075842 Two-dimensional analysis for emitter ledge thickness of In Ga P ∕ Ga As heterojunction bipolar transistors Appl. Phys. Lett. 90, 043510 (2007);Dual passivation ͑with ledge structure and sulfur treatment͒ on base surface is employed to improve device performance of an InGaP / GaAs heterojunction bipolar transistor ͑HBT͒. By using this dual-passivation technique, good transistor characteristics such as dc current gain ␤ F , offset voltage ⌬V CE , specific contact resistance C , and sheet resistance R sh are obtained. In addition, the InGaP / GaAs HBT with dual passivation exhibits improved thermal stability and microwave characteristics. Our experimental results suggest that the dual-passivated device can be used for high-temperature and/or low-power electronics applications.