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Yang, V. K.; Groenert, M.; Taraschi, Gianni; Leitz, Christopher; Pitera, Arthur J.; Currie, M. T.; Cheng, Zhiyuan; Fitzgerald, Eugene A.

doi:10.1023/a:1016006824115

Cited by 28 publications

(11 citation statements)

References 11 publications

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“…Examples of the successful integration of various electronic and optoelectronic components with silicon integrated circuits ͑ICs͒ include germanium p-type metal-oxide semiconductor field-effect transistors ͑p-MOSFETs͒, 1 silicon germanium on insulator ͑SGOI͒ for high-speed and low-power applications, 2 optical links of GaAs p-i-n light-emitting diode ͑LED͒ and detector diodes, 3 as well as Al x Ga 1−x As/ In x Ga 1−x As LEDs and lasers. 4 It is natural to consider what system-level function may be integrated next onto the silicon CMOS platform.…”

Section: Introductionmentioning

confidence: 99%

Electrochemically controlled transport of lithium through ultrathin SiO2

Ariel

Ceder

Sadoway

et al. 2005

Journal of Applied Physics

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Monolithically integrating the energy supply unit on a silicon integrated circuit (IC) requires the development of a thin-film solid-state battery compatible with silicon IC fabrication methods, materials, and performance. We have envisioned materials that can be processed in a silicon fabrication environment, thus bringing local stored energy to silicon ICs. By incorporating the material directly onto the silicon wafer, the economic parallelism that silicon complementary metal-oxide-semiconductor (CMOS) technology has enjoyed can be brought to power incorporation in each IC on a processed wafer. It is natural to look first towards silicon CMOS materials, and ask which materials need enhancement, which need replacement, and which can be used “as is.” In this study, we begin by using two existing CMOS materials and one unconventional material for the construction of a source of electric power. We have explored the use of thermally grown silicon dioxide (SiO2) as thin as 9nm acting as an electrolyte material candidate in a solid-state power cell integrated on silicon. Other components of the thin-film cell consisted of rf-sputtered lithium cobalt oxide (LiCoO2) as the cathode and highly doped n-type polycrystalline silicon (polysilicon) grown by low-pressure chemical-vapor deposition as the anode. All structures were fabricated using conventional microelectronics fabrication technology. The charge and discharge behaviors of the LiCoO2∕SiO2∕polysilicon cells were studied. On the basis of the impedance measurements an equivalent circuit model of an ultrathin cell was inferred, and its microstructure was characterized by electron microscopy imaging. In spite of its high series resistance (∼4×107Ω), we have shown that an ultrathin layer of an as-deposited Li-free SiO2 is an interesting candidate for an electrolyte or controllable barrier layer in lithium-ion-based devices.

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Section: Introductionmentioning

confidence: 99%

Electrochemically controlled transport of lithium through ultrathin SiO2

Ariel

Ceder

Sadoway

et al. 2005

Journal of Applied Physics

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“…To realize III-V materials integration on low-cost, mechanically stronger Si substrates, a number of research groups have investigated III-V growth on Si for optoelectronic and microelectronic applications. 10,11 The main challenges of producing high-quality III-V materials on Si are: (i) the large lattice mismatch between the two materials [in the case of gallium arsenide (GaAs), the mismatch is 4.1%], and (ii) the formation of antiphase domains (APDs) due to the polar compound semiconductor growth on a nonpolar elemental structure. In an attempt to resolve challenge (i), germanium (Ge), which has a lattice constant perfectly matched to GaAs (0.07% at 300 K) and superior electron and hole mobility compared with Si, can be grown on Si to provide a buffer layer for integration and fabrication of GaAsbased devices on a Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Lee

Tan

Jandl

et al. 2013

Journal of Elec Materi

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The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0°and 6°offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6°offcut presents $65% higher threading dislocation density and higher root-mean-square (RMS) surface roughness (1.92 nm versus 0.98 nm) than Ge film grown on Si (001) with 0°offcut. Plan-view transmission electron microscopy also reveals that threading dislocations are more severe (in terms of contrast and density) for the 6°offcut. In addition, both high-resolution x-ray diffraction and Raman spectroscopy analyses show that the Ge epilayer on 6°offcut wafer presents higher tensile strain. The poorer quality of the Ge film on Si (001) with 6°offcut is a result of an imbalance in Burgers vectors that favors dislocation nucleation over annihilation.

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“…In this case, the stress on a crystal surface can provide a natural driving force for the nanostructure formation and the threedimensional island formation for the lattice mismatched epitaxial growth on the substrates. At the initial stage of the heteroepitaxy growth of the AlSb layer on GaAs, a three-dimensional nucleation step is shown to take place before the surface is smoothed out by a thicker layer growth (7). The lower temperature AlSb buffer layer will reduce the surface diffusion; atoms can only diffuse a short distance before they are incorporated.…”

Section: Resultsmentioning

confidence: 98%

Growth of Strain InAs-Channel Quantum Well FETs on Si Substrate Using SiGe buffer

et al. 2008

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The growth of the AlGaSb/InAs quantum well field effect transistor(QWFET) epitaxial structure on the Si substrate has been investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown AlGaSb/AlSb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the AlGaSb/InAs QWFET structure and the Si substrate. A very high room-temperature electron mobility of 27300 cm 2 /V s was achieved. Strained QWFET was also grown on the GaAs substrate, it is found that the strained QWFET grown on the Si substrate has higher electron mobility due to high strain induced in this structure.

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Untitled

Cited by 28 publications

References 11 publications

Electrochemically controlled transport of lithium through ultrathin SiO2

Electrochemically controlled transport of lithium through ultrathin SiO2

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Growth of Strain InAs-Channel Quantum Well FETs on Si Substrate Using SiGe buffer

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