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Lee, Takhee; Liu, Jia; Chen, Nien-Po; Andres, R. P.; Janes, David B.; Reifenberger, R.

doi:10.1023/a:1010053303142

Cited by 43 publications

(19 citation statements)

References 66 publications

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“…[21][22][23][24][25][26][27][28][29][30] Patterning of these particle film assemblies is essential for their subsequent incorporation into higher order architectures and devices. 31,32 The first patterning motif tested, photolithography, was carried out as outlined in Figure 2a. Approximately 0.1 mL of neat dodecene was applied to a 1 cm 2 hydride-terminated Ge(100) surface, which was subequently exposed to 254 nm UV light (9 mW cm -2 intensity) through a metal grid contact mask under an inert atmosphere.…”

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confidence: 99%

Electroless Nanoparticle Film Deposition Compatible with Photolithography, Microcontact Printing, and Dip-Pen Nanolithography Patterning Technologies

et al. 2002

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Nanoparticles of Au, Pd, and Pt form spontaneously as thin, morphologically complex metallic films upon various semiconducting or metal substrates such as Ge(100), Cu, Zn, and Sn, via galvanic displacement from aqueous metal salt solutions. Patterning of these high surface area metal films into ordered structures utilizing photolithography, microcontact printing (µ-CP), and dip-pen nanolithography (DPN) is demonstrated on flat Ge(100), and (for µ-CP) on rough Zn foil.There is presently enormous interest in patterning surfaces with micro-and nanometer resolution for both fundamental investigations and technological applications.1 Recent developments, such as dip-pen nanolithography (DPN) 2 and microcontact printing (µ-CP), 1 employ a liquid-phase "ink" to pattern a solid "paper" substrate. Established inks for DPN and µ-CP include thiols, 2 DNA, 3 polymers, 4 proteins, 5,6 hexamethyldisilazane, 7 alkylsiloxanes, 8 palladium colloids, 9 sols (Al, Si, Sn oxides), 10 metal complexes, 11 and gold. 12 In this paper, we demonstrate that Au, Pd, and Pt nanoparticle films, produced through a spontaneous electroless deposition reaction, are amenable to patterning via photolithography, µ-CP, and DPN. Because many properties of the Au, Pd, and Pt nanoparticle films, including film thickness, particle size, and roughness, can be controlled, 13 Figure 1. Deposition proceeds via galvanic displacement 20 in the absence of fluoride, pH buffers, complexing agents, or external reducing agents, in contrast to earlier work. 21-30 Patterning of these particle film assemblies is essential for their subsequent incorporation into higher order architectures and devices. 31,32 The first patterning motif tested, photolithography, was carried out as outlined in Figure 2a. Approximately 0.1 mL of neat dodecene was applied to a 1 cm 2 hydride-terminated Ge(100) surface, which was subequently exposed to 254 nm UV light (9 mW cm -2 intensity) through a metal grid contact mask under an inert atmosphere. 33 The illuminated regions undergo hydrogermylation at room temperature within thirty minutes. A related functionalization approach has been shown on silicon.34 This leads to spatially defined 5-25 µm-sized domains of dodecyl and hydride. Immersion of the hydride/alkyl surface into aqueous noble metal salt solutions results in preferential deposition in the hydride areas since the alkyl monolayer functions as an effective dielectric barrier (Figure 3). The hydride surface oxidizes in-situ and subsequently dissolves in the aqueous medium. Metal salt reduction and deposition can then occur, leading to metallization between the alkylated domains. In this case, the germanium oxide dissolves in water, 35 leading to intimate electrical contact between the semiconductor bulk and the metal salts and affording a faster rate of deposition. In the case of silicon, however, this approach is not feasible because the native oxide has been shown to effectively prevent metal deposition due to its insolubility in water. 20 Attempts to use spatially define...

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confidence: 99%

Electroless Nanoparticle Film Deposition Compatible with Photolithography, Microcontact Printing, and Dip-Pen Nanolithography Patterning Technologies

et al. 2002

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“…In order to investigate the dependence of the freezing point on the cooling rate, we also present the temperature-potential energy curves of icosahedrons formed at three different cooling rates, as shown in Figure 2b. It can be seen that the freezing point was almost unchanged, except that the curves of 4 and 6 were lower in the low temperature region. From this, it can be inferred that slowing down the cooling rate contributes to a lower potential and a more stable configuration.…”

Section: Structural Transition Processmentioning

confidence: 94%

“…Metal nanoclusters containing tens to thousands of metal atoms with a large surface area to volume ratio, showing many specific differences in physical and chemical properties from the corresponding bulk, are considered to have great potential applications in efficient catalytic [1][2][3][4][5], nano-equipment assembly [6,7] and other innovative technology fields [8,9]. In recent years, due to scientific research and technological progress, self-assembly and artificial assembly of nanostructure systems or devices have been increasingly attracting attention [10].…”

Section: Introductionmentioning

confidence: 99%

Transitions and Geometric Evolution of Cu309 Nanocluster during Slow Cooling Process

Zhao

Wan

et al. 2018

Crystals

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Abstract:Since the nucleation and growth of clusters is usually a non-equilibrium condensation process, a distribution of structural isomers for a given cluster size may be encountered even under the same conditions. In this work, molecular dynamics simulations are performed on sets of molten clusters of Cu 309 to study their structures at low temperatures while controlling the cooling rate. Several different final structures including perfect icosahedra (ICO), imperfect Mark' decahedra (MDEC) and imperfect FCC truncated octahedra (TOCT) are obtained even at the same cooling rate. It is calculated that the most favorable structure is icosahedra, which becomes more and more favorable as the cooling rate is slowed. To better understand the process of crystallization, several techniques, including potential-temperature curves, common neighbor analysis (CNA) and radial distribution function (RDF), are used to analyze and study the structural transition. Results show that different structures are obtained under identical conditions due to the stochastic nature of nucleation and relatively small energy difference between isomers. The process of geometrical evolution for icosahedra is given by comparing and analyzing the time evolution of the root-mean-square deviation (RMSD) of atoms located in every shell.

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“…At present, the study of electric properties of stressed heteroborder between a quantum dot(QD) (InAs, CdTe) and matrix (GaAs, ZnTe) is of great interest [1]. This interest is related to the development of new approaches to the creation of p-n structures on QDs, specifically tunnel diodes [2], quantum transistors [3], elements of one-electronic memory [4].…”

Section: Introductionmentioning

confidence: 99%