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Nakwaski, W.; ́Kowiak, P. Mac

doi:10.1023/a:1026068725681

Cited by 9 publications

(3 citation statements)

References 41 publications

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“…This is not surprising, as higher order LP modes are expected to turn-on as the current is increased; however, the observed spatial distribution of the lasing does not follow any clear predicted low-order LP mode shapes. 65,66 This non-uniform lasing is one of the largest barriers to achieving high power density III-nitride VCSELs. The irregular nature of the lasing in the aperture suggests that filamentation is occurring.…”

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confidence: 99%

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

Leonard

Cohen

Yonkee

et al. 2015

Applied Physics Letters

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We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3 nm quantum well width, 1 nm barriers, a 5 nm electron-blocking layer, and a 6.95-λ total cavity thickness. These advances yield a single longitudinal mode 406 nm nonpolar VCSEL with a low threshold current density (∼16 kA/cm2), a peak output power of ∼12 μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

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confidence: 99%

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

Leonard

Cohen

Yonkee

et al. 2015

Applied Physics Letters

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“…In contrast, an increase in the ambient temperature is followed by a distinct increase in the order of the lowest threshold modes in the VCSEL with identical apertures, which additionally decreases considerably λ. Besides, the thermal-focusing effect in the high-temperature central part of an active region in the proposed VCSEL is additionally supporting the fundamental mode, whereas, in the VCSEL with identical apertures, this effect is shifting the radiation towards the active-region edge, enhancing many higher order modes (Nakwaski and Maćkowiak 2003).…”

Section: The Resultsmentioning

confidence: 94%

A new approach to improve mode selectivity of higher output oxide-confined vertical-cavity surface-emitting lasers

Sarzała¹

2004

Semicond. Sci. Technol.

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Requirements of a higher output and the single-fundamental-mode operation are usually contradictory to each other. In the present paper, an essential modification of a design of the GaAs-based oxide-confined vertical-cavity surface-emitting lasers (VCSELs) is proposed. Functions of both the oxide apertures are separated: while the larger upper one is designed to create the radial waveguiding effect, the smaller bottom one is only funnelling the current injection into the active region. Hence both may be optimized separately. As a result, single-fundamental-mode operation is confirmed by our simulation to be preserved at much higher output and/or at much higher temperatures than in standard VCSELs.

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“…This lateral carrier transport depends directly on carrier confinement and improvement of the confinement is desirable for improvements in the technology of light emitting devices. Moreover, slow carrier redistribution between QDs is needed for some new applications (for example, single photon sources) [6]. The study of self-organization in this system and the opportunity to control carrier confinement is therefore of great importance.…”

Section: Introductionmentioning

confidence: 99%

Localization of non‐equilibrium carriers in deep InGaN quantum dots and its impact on the device performance

Sizov¹,

Lundin

Заварин

et al. 2006

Phys. Status Solidi (c)

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Structural and optical properties of MOCVD grown InGaN quantum dot (QD) layers have been studied using transmission electron microscopy, X-ray diffraction, near-field spectroscopy and selectively excited photoluminescence. We have shown that the presence of Indium in the matrix strongly increases the activation energy of QD layers, due to stimulated phase separation. The increase of the activation energy is accompanied by an increase of the activation time, which was revealed from photocurrent spectroscopy.

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Cited by 9 publications

References 41 publications

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

A new approach to improve mode selectivity of higher output oxide-confined vertical-cavity surface-emitting lasers

Localization of non‐equilibrium carriers in deep InGaN quantum dots and its impact on the device performance

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