Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

Leonard, John T.; Cohen, Daniel; Yonkee, Benjamin P.; Farrell, Robert M.; Margalith, Tal; Lee, SeungGeun; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

doi:10.1063/1.4926365

Cited by 88 publications

(76 citation statements)

References 61 publications

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“…In GaAs-VCSELs simultaneous current and optical confinement is achieved by selective oxidation of a high Al-content AlGaAs-layer. Recently, new approaches for current confinement in GaN-VCSELs have been developed such as plasma damage of p-GaN 32 , ion implantation 36,47 , and airgaps by photoelectrochemical etching 38 . A number of key challenges in GaN-VCSEL will be described in more detail in the next chapter.…”

Section: State-of-the-artmentioning

confidence: 99%

“…Publications from a few groups followed, and since the first demonstrations there have been a lot of progress in the field of electrically injected III-nitride based VCSELs, both in terms of new technological solutions as well as performance characteristics. 31 To date there are seven groups in the world who have demonstrated lasing under electrical injection [27][28][29][30][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47] , and the different approaches and structures are summarized in Table 1. The performance characteristics of published devices, in terms of output power and threshold current density, are plotted in Fig.…”

Section: State-of-the-artmentioning

confidence: 99%

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Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm 2 . The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

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Section: State-of-the-artmentioning

confidence: 99%

Section: State-of-the-artmentioning

confidence: 99%

Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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“…Recently, Leonard et al proposed an approach using ion-implantation to define the current aperture. In their result, the index contrast between the implanted and the non-implanted p ++ GaN can be enhanced to 0.05 [9]. In this letter, we propose an alternative design using self-aligned SiO 2 aperture featuring a low index and high resistance.…”

Section: Introductionmentioning

confidence: 99%

“…III-Nitride based materials are highly attractive for making vertical microcavity (MC) light emitters such as strongly coupled polariton lasers and conventional vertical-cavity surface-emitting lasers (VCSELs) due to their large exciton binding energies and wide spectra tuning range in the ultraviolet-visible region [1][2][3][4][5][6][7][8][9][10][11][12]. So far, electrically pumped polariton emitters and conventional VCSELs have been demonstrated in III-nitride based MCs at room temperature (RT).…”

Section: Introductionmentioning

confidence: 99%

Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

Lai

Chang

et al. 2017

Nanoscale Res Lett

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In this work, we report on electrically pumped III-N microcavity (MC) light emitters incorporating oxide confinement apertures. The utilized SiO 2 aperture can provide a planar ITO design with a higher index contrast (~1) over other previously reported approaches. The fabricated MC light emitter with a 15-μm-aperture shows a turn-on voltage of 3.3 V, which is comparable to conventional light emitting diodes (LEDs), showing a good electrical property of the proposed structure. A uniform light output profile within the emission aperture suggesting the good capability of current spreading and current confinement of ITO and SiO 2 aperture, respectively. Although the quality factor (Q) of fabricated MC is not high enough to achieve lasing action (~500), a superlinear emission can still be reached under a high current injection density (2.83 kA/cm 2 ) at 77 K through the exciton-exciton scattering, indicating the high potential of this structure for realizing excitonic vertical-cavity surface-emitting laser (VCSEL) action or even polariton laser after fabrication optimization.

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“…High reflectivity distributed Bragg reflectors (DBR) structure, short cavity thickness [3][4][5] , high transparence conductive layer, efficient transverse current spreading, small current confinement aperture, and resonant cavity controled in the nitride VCSEL need to be improved. Leonard et al reported on violet nonpolar III-nitride VCSELs with a tunnel junction intracavity contact 6 and an Al ion implanted aperture 7 . The epitaxial AlGaN/GaN stack 8,9 and AlN/GaN stacks 10,11 structures had been reported for the bottom epitaxial DBRs in GaN-based VCSEL devices.…”

mentioning

confidence: 99%

InGaN light-emitting diodes with embedded nanoporous GaN distributed Bragg reflectors

Shieh

Jhang

Huang

et al. 2015

Appl. Phys. Express

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InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undopedGaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n + -GaN) in the 12-period n + -GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface.Gallium nitride (GaN) materials have considerable in optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LD) 1 , and vertical cavity surface emitting lasers (VCSEL) 2 . High reflectivity distributed Bragg reflectors (DBR) structure, short cavity thickness 3-5 , high transparence conductive layer, efficient transverse current spreading, small current confinement aperture, and resonant cavity controled in the nitride VCSEL need to be improved. Leonard et al. reported on violet nonpolar III-nitride VCSELs with a tunnel junction intracavity contact 6 and an Al ion implanted aperture 7 . The epitaxial AlGaN/GaN stack 8,9 and AlN/GaN stacks 10,11 structures had been reported for the bottom epitaxial DBRs in GaN-based VCSEL devices. Large lattice mismatch and low refractive index different of the stack structures are the challenges for the epitaxial DBR structures with long epitaxial growth time. The AlInN/GaN DBR structure 12,13 is lattice matched to GaN material, but the growth of AlInN layer remains a challenge in InGaN-based LED structures. To realize the high reflectivity with less pairs of stack structure, the air-gap/GaN DBR structures with large refractive index different had been fabricated through selectively anodized processe 14,15 , and thermal decomposition techniques [16][17][18] . But, the low mechanical strength and the tiny high reflective area remains a challenge for the photonic device fabrication. Plawsky et al. 19 . reported the nanoporous material for the photonics through the evaporation induced self-assembly process and oblique or glancing angle deposition. The resonant cavity effect of III-nitride thin-film flip-chip light-emitting diodes with anatase TiO 2 microsphere array were reported 20 . Nanoporous GaN material has been reported as an effective low refractive index for the DBR structure applications [21][22][23] .In this pa...

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Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

Cited by 88 publications

References 61 publications

Progress and challenges in electrically pumped GaN-based VCSELs

Progress and challenges in electrically pumped GaN-based VCSELs

Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

InGaN light-emitting diodes with embedded nanoporous GaN distributed Bragg reflectors

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