In this work, we report on electrically pumped III-N microcavity (MC) light emitters incorporating oxide confinement apertures. The utilized SiO 2 aperture can provide a planar ITO design with a higher index contrast (~1) over other previously reported approaches. The fabricated MC light emitter with a 15-μm-aperture shows a turn-on voltage of 3.3 V, which is comparable to conventional light emitting diodes (LEDs), showing a good electrical property of the proposed structure. A uniform light output profile within the emission aperture suggesting the good capability of current spreading and current confinement of ITO and SiO 2 aperture, respectively. Although the quality factor (Q) of fabricated MC is not high enough to achieve lasing action (~500), a superlinear emission can still be reached under a high current injection density (2.83 kA/cm 2 ) at 77 K through the exciton-exciton scattering, indicating the high potential of this structure for realizing excitonic vertical-cavity surface-emitting laser (VCSEL) action or even polariton laser after fabrication optimization.

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