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Vandervorst, Wilfried; Bender, Hugo

doi:10.1007/978-3-642-52314-4_178

Essderc ’89 1989

DOI: 10.1007/978-3-642-52314-4_178

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Wilfried Vandervorst¹,

Hugo Bender²

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2006

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2D Dopant Determination in Laser-Diffused Si Resistors Using Dopant-Selective Etching

Liao

Degorce

Belisle

et al. 2006

J. Electrochem. Soc.

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Two-dimensional (2D) dopant profiles, in the range of 9×1016 to 3.6×1018atoms∕cm3 , in laser-diffused silicon resistors were obtained using dopant selective etching (DSE) in combination with cross-sectional transmission electron microscopy (TEM) and focused ion beam technique. Compared with conventional DSE/TEM dopant evaluation, the properties of this technique, related to the reliability, reproducibility, and accuracy of quantification of dopant concentration from 9×1016 to 6×1019atoms∕cm3 , have been improved by considering a vector instead of a scalar etching rate, as determined by an etching model and by a novel calibration method. Those evaluated profiles were accurately compared with a numerical simulation based on heat-transfer and diffusion equations.

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2D Dopant Determination in Laser-Diffused Si Resistors Using Dopant-Selective Etching

Liao

Degorce

Belisle

et al. 2006

J. Electrochem. Soc.

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show abstract

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Cited by 1 publication

References 33 publications

2D Dopant Determination in Laser-Diffused Si Resistors Using Dopant-Selective Etching

2D Dopant Determination in Laser-Diffused Si Resistors Using Dopant-Selective Etching

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