A 0.008 ${\hbox {mm}}^{2}$ 500 $\mu{\rm W}$ 469 kS/s Frequency-to-Digital Converter Based CMOS Temperature Sensor With Process Variation Compensation

Hwang, Sun Jin; Koo, Jae-Mean; Kim, Ki-Soo; Lee, Hokyu; Kim, Chulwoo

doi:10.1109/tcsi.2013.2246254

Cited by 81 publications

(52 citation statements)

References 9 publications

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“…Small and accurate temperature sensor design is desired since temperature sensing accuracy is directly dependent on the distance between sensors and hotspots and sensor's circuit-level accuracy [1][2][3]. Existing sensors achieve impressive area and accuracy [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. However, emerging technology trends toward multicore architectures, 3D-IC, and ultra-dynamic-voltage-scaling (UDVS) make sensor designs to be even more demanding with the following requirements.…”

Section: Introductionmentioning

confidence: 99%

“…Also, BJT is not available in many advanced technologies. As compared to the standard BJT sensors, MOSFET threshold voltage (V TH ) based sensors typically achieve a smaller footprint and better voltage scalability [10][11][12][13][14][15][16][17][18]. However, the linearity of V TH against temperature is dependent on the characteristics of the process technology which raises the concern on technology portability of such design.…”

Section: Introductionmentioning

confidence: 99%

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A Sub-50 µm2, Voltage-Scalable, Digital-Standard-Cell-Compatible Thermal Sensor Frontend for On-Chip Thermal Monitoring

Kim

Seok

2018

JLPEA

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This paper presents an on-chip temperature sensor circuit for dynamic thermal management in VLSI systems. The sensor directly senses the threshold voltage that contains temperature information using a single PMOS device. This simple structure enables the sensor to achieve an ultra-compact footprint. The sensor also exhibits high accuracy and voltage-scalability down to 0.4 V, allowing the sensor to be used in dynamic voltage frequency scaling systems without requiring extra power distribution or regulation. The compact footprint and voltage scalability enables our proposed sensor to be implemented in a digital standard-cell format, allowing aggressive sensor placement very close to target hotspots in digital blocks. The proposed sensor frontend prototyped in a 65 nm CMOS technology has a footprint of 30.1 µm 2 , 3σ-error of ±1.1 • C across 0 to 100 • C after one temperature point calibration, marking a significant improvement over existing sensors designed for dynamic thermal management in VLSI systems.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Sub-50 µm2, Voltage-Scalable, Digital-Standard-Cell-Compatible Thermal Sensor Frontend for On-Chip Thermal Monitoring

Kim

Seok

2018

JLPEA

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“…(2)(3)(4)(5)(6)(7)(8)(9) Compared with analog sensors, digital sensors offer advantages of higher system integration and lower area consumption. However, process variation affects the measurement accuracy.…”

Section: Introductionmentioning

confidence: 99%

“…Several methods have been proposed to overcome this problem. (3)(4)(5)(6) One method calibrates the sensing elements directly, whereas another method changes the time domain to reduce the effect of process variation. (3,5,6) The second method is superior, because process variation compensation technology is integrated to the primary circuit and offers the advantages of low power and area consumption.…”

Section: Introductionmentioning

confidence: 99%

A High-Resolution All-Digital Temperature Sensor with Process Variation Compensation

Fujisawa

Noda

Hayashi

et al. 2016

Sensors and Materials

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In this paper, we propose a high-resolution all-digital complementary metal-oxide semiconductor (CMOS) temperature sensor with a ring oscillator for temperature sensing and power supply immunity, a time amplifier for process variation compensation, and serial digital output for low area consumption. Because of the linearity of its high output cycle-temperature, the sensor has excellent measurement accuracy; the architecture of the sensor effectively decreased power supply sensitivity, and the parallel-to-serial converter considerably reduced area consumption. In addition, the high resolution is determined by the time amplifier with external digital codes. The determination of resolution using the time amplifier and the process variation compensation were accomplished simultaneously. The temperature sensor was fabricated using 0.18-μm standard CMOS technology, and the core circuit occupies an area of 0.001 mm 2 . The experimental results indicated that the energy per conversion rate was only 10 nJ at a supply voltage of 1.8 V; the conversion rate was 15-30 k samples/s, and the error in temperature sensing ranged from −1.58 to +1.6 °C with a resolution higher than 0.1 °C after one-point calibration in the −40 to +130 °C range. With these advantages, the temperature sensor is suitable for application in large integrated circuit (IC) systems and three-dimensional ICs.

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“…The same technique can be also be implemented in another way by measuring the variation in frequency of oscillation caused by variation in temperature. The frequency is inversely proportional to temperature because the decrease in the mobility is the dominant feature [11][12]. Both of these kinds of sensors require a larger chip area and produces difficulty in attaining linearity for the higher range.…”

Section: Introductionmentioning

confidence: 99%

Study and Design of 40 nW CMOS Temperature Sensor for Space Applications

Pandey¹,

Nath²

2015

TELKOMNIKA

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A 0.008 ${\hbox {mm}}^{2}$ 500 $\mu{\rm W}$ 469 kS/s Frequency-to-Digital Converter Based CMOS Temperature Sensor With Process Variation Compensation

Cited by 81 publications

References 9 publications

A Sub-50 µm2, Voltage-Scalable, Digital-Standard-Cell-Compatible Thermal Sensor Frontend for On-Chip Thermal Monitoring

A Sub-50 µm2, Voltage-Scalable, Digital-Standard-Cell-Compatible Thermal Sensor Frontend for On-Chip Thermal Monitoring

A High-Resolution All-Digital Temperature Sensor with Process Variation Compensation

Study and Design of 40 nW CMOS Temperature Sensor for Space Applications

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