A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System

Pérez-Bailón, J.; Márquez, A.; Calvo, B.; Medrano, N.

doi:10.3390/s18051405

Cited by 9 publications

(9 citation statements)

References 36 publications

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“…Through simulation, it was verified that both target cutoff frequencies could be met even against PT-variations (V is assumed to be provided by a voltage Low Drop-Out (LDO) regulator [45]). Experimentally, to study the influence of the temperature over the cutoff frequency, a Fitoterm 22E thermal chamber from Aralab was used to sweep the temperature from −40 to 100 °C.…”

Section: Resultsmentioning

confidence: 99%

A CMOS Low Pass Filter for SoC Lock-in-Based Measurement Devices

Pérez-Bailón

Calvo

Medrano

2019

Sensors

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This paper presents a fully integrated Gm–C low pass filter (LPF) based on a current steering Gm reduction-tuning technique, specifically designed to operate as the output stage of a SoC lock-in amplifier. To validate this proposal, a first-order and a second-order single-ended topology were integrated into a 1.8 V to 0.18 µm CMOS (Complementary Metal-Oxide-Semiconductor) process, showing experimentally a tuneable cutoff frequency that spanned five orders of magnitude, from tens of mHz to kHz, with a constant current consumption (below 3 µA/pole), compact size (<0.0140 mm2/pole), and a dynamic range better than 70 dB. Compared to state-of-the-art solutions, the proposed approach exhibited very competitive performances while simultaneously fully satisfying the demanding requirements of on-chip portable measurement systems in terms of highly efficient area and power. This is of special relevance, taking into account the current trend towards multichannel instruments to process sensor arrays, as the total area and power consumption will be proportional to the number of channels.

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Section: Resultsmentioning

confidence: 99%

A CMOS Low Pass Filter for SoC Lock-in-Based Measurement Devices

Pérez-Bailón

Calvo

Medrano

2019

Sensors

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“…Lastly, as the temperature estimation function of (2) is a function of not only μ(T) and V TH (T) but also V DD , this temperature sensor is necessarily sensitive to the power supply variation. Thus, this temperature sensor should be implemented along with an additional integrated voltage regulator [ 64 , 65 , 66 , 67 , 68 , 69 , 70 , 71 , 72 , 73 , 74 , 75 ] for constant V DD . The measured V DD sensitivity is as large as 1.6 °C/mV with no voltage regulator.…”

Section: Characterizationmentioning

confidence: 99%

Categorization and Characterization of Time Domain CMOS Temperature Sensors

Byun

2020

Sensors

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Time domain complementary metal-oxide-semiconductor (CMOS) temperature sensors estimate the temperature of a sensory device by measuring the frequency, period and/or delay time instead of the voltage and/or current signals that have been traditionally measured for a long time. In this paper, the time domain CMOS temperature sensors are categorized into twelve types by using the temperature estimation function which is newly defined as the ratio of two measured time domain signals. The categorized time domain CMOS temperature sensors, which have been published in literature, show different characteristics respectively in terms of temperature conversion rate, die area, process variation compensation, temperature error, power supply voltage sensitivity and so on. Based on their characteristics, we can choose the most appropriate one from twelve types to satisfy a given specification.

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“…Thus, design guidelines are used to minimize both the power and area consumption, while maintaining an adequate regulating performance with a low-voltage topology for our requirements: a 1.2 V output voltage, V out , compatible with battery supply voltage values V BAT = 3.3 − 1.3 V, for a maximum I Load = 50 mA over a C Load,max = 50 pF. In this attempt, we have followed the compensation and dynamic-enhancement strategies successfully adopted in [27] but adapted to provide the required low-voltage compatibility, further optimizing the transient response by introducing a multiple dynamic feedback strategy. Moreover, a fully integrated temperature and voltage-supply-independent voltage reference are also proposed to further advance into a truly integrated device.…”

Section: Introductionmentioning

confidence: 99%

A Fully-Integrated 180 nm CMOS 1.2 V Low-Dropout Regulator for Low-Power Portable Applications

2021

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This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a –40 to 120°C temperature range. To meet with the constraints of system-on-chip (SoC) battery-operated devices, ultralow power (Iq = 8.6 µA) and minimum area consumption (0.109 mm2) are maintained, including a reference voltage Vref = 0.4 V. It uses a high-gain dynamically biased folded-based error amplifier topology optimized for low-voltage operation that achieves an enhanced regulation-fast transient performance trade-off.

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A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System

Cited by 9 publications

References 36 publications

A CMOS Low Pass Filter for SoC Lock-in-Based Measurement Devices

A CMOS Low Pass Filter for SoC Lock-in-Based Measurement Devices

Categorization and Characterization of Time Domain CMOS Temperature Sensors

A Fully-Integrated 180 nm CMOS 1.2 V Low-Dropout Regulator for Low-Power Portable Applications

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