A 0.18 μm SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications

Kirchgessner, J.; Bigelow, Stephen J.; Chai, F.K.; Cross, Rod; Dahl, P.; Duvallet, A.; Gardner, Brent G.; Griswold, Mark; Hammock, D.; Heddleson, J.; Hildreth, S.; Irudayam, A.; Lesher, C.; Meixner, T.; Meng, Peipei; Menner, M.; McGinley, John F.; Monk, David J.; Morgan, David; Rueda, H.; Small, C. H.; Stewart, Sarah A.; Ma, Tao; To, I.; Welch, P.; Zirkle, Thomas A.; Huang, Wen-Pin

doi:10.1109/bipol.2001.957879

Cited by 34 publications

(8 citation statements)

References 4 publications

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“…A low cost, qualified 0.18µm BiCMOS platform designed for wireless RF transceiver products with a 50GHz f T and 110GHz f M AX SiGe:C HBT device [3] is used as the baseline technology. In order to achieve the 200GHz f T and 300GHz f M AX performance targets, the HBT device top structure is modified from a simple quasiself-aligned structure, with the extrinsic base to emitter dimension set by lithography alignment, to a self-aligned structure with selective SiGe:C base epi integration.…”

Section: Technologymentioning

confidence: 99%

SiGe technology and circuits for automotive radar applications

Pacheco¹,

Reuter²,

Trotta³

et al. 2011

2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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Section: Technologymentioning

confidence: 99%

SiGe technology and circuits for automotive radar applications

Pacheco¹,

Reuter²,

Trotta³

et al. 2011

2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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“…As a result of the natural fit into the BiCMOS technology roadmaps, today more than 10 BiCMOS SiGe technologies have been introduced in over three technology generations in manufacturing environments in less than a few years [26]. In this time frame, the speed of the SiGe HBT device has accelerated from 50 to 300 GHz frequencies (with circuit performance demonstrated over 100 GHz), rapidly opening new doors for future un-anticipated applications [27][28][29][30].…”

Section: Introductionmentioning

confidence: 98%

A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I—ESD

Voldman¹

2005

Microelectronics Reliability

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“…Silicon germanium carbon (SiGe:C) HBT BiCMOS technologies have become the standard for many wireless applications as consumer demand for low power portable products continues to increase [1] - [3] More recently, SiGe:C HBT-based technologies have gained increasing interest for emerging millimeter-wave markets [4] - [6], as f T and/or f MAX of the HBT devices has exceeded 200GHz.…”

Section: Introductionmentioning

confidence: 99%