Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology

Abstract

A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (f T ) of 200GHz and a maximum oscillation frequency (f MAX ) of 300GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known f MAX obtained without the use of buried layer or deep trench isolation.

Power Amplifier for 77-GHz Automotive Radar in 90-nm LP CMOS Technology

“…SiGe HBT technology has been the primary technology for 77-GHz automotive radar applications [1], [2]. As the advancement of sub-micro CMOS technology increases the unity current gain frequency, , and the maximum available power gain, , CMOS implementation provides a potential path for realization of highly-integrated and low-cost 77-GHz automotive radars.…”