An enhanced 180nm millimeter-wave SiGe BiCMOS technology with fT/fMAX of 260/350GHz for reduced power consumption automotive radar IC's

Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

“…3b shows f T and f max as a function of the collector-current density. The peak f T /f max values of 300 GHz/500 GHz at V CB = 0.5 V for the BEBC EBL HBT represent a substantial progress compared to the BEC IFX device (240 GHz/380 GHz) and to results of other DPSA HBT technologies [1], [4]. The present EBL flow shows a 55 GHz higher peak f max and a 20 GHz lower peak f T than the IHP reference (Tab.…”

“…Here, no inductive peaking was exploited as it was applied for the record gate delay of 1.65 ps [10]. For the reduced geometry typical values of about 1.8 ps are achieved which are substantially lower than the best values for DPSA HBTs of [1] and [4]. Higher delays towards the wafer edge (Fig.…”

“…These developments aim at new applications in the 0.1 to 1THz range but also at enhanced design robustness and power efficiency for operation frequencies below 0.1 THz [3], [4]. Comprehensive work on the standard double-poly-Si self-aligned (DPSA) HBT architecture with a selective epitaxial growth (SEG) of the base showed that f max values above 500 GHz are hardly within reach [5].…”