2007
DOI: 10.1109/rfic.2007.380844
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A 0.5 V Receiver in 90 nm CMOS for 2.4 GHz Applications

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Cited by 7 publications
(6 citation statements)
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“…Using an on-chip negative conductance tuning circuit a gain boost of 20dB can be achieved resulting in an overall DC gain of 62dB [23]. Figure 10 illustrates a 0.5V two-stage OTA topology [28] optimized for use in a 90nm CMOS technology where the nominal V T is about 0.3V. Taking advantage of the RSCE by using non-minimum length devices, applying forward body bias on the input devices, and biasing the input transistors towards weak inversion to improve g m efficiency allows to use a standard differential input pair M 1A /M 1B while maintaining the input common mode at 0.25V.…”
Section: Architectural Level Solutionsmentioning
confidence: 99%
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“…Using an on-chip negative conductance tuning circuit a gain boost of 20dB can be achieved resulting in an overall DC gain of 62dB [23]. Figure 10 illustrates a 0.5V two-stage OTA topology [28] optimized for use in a 90nm CMOS technology where the nominal V T is about 0.3V. Taking advantage of the RSCE by using non-minimum length devices, applying forward body bias on the input devices, and biasing the input transistors towards weak inversion to improve g m efficiency allows to use a standard differential input pair M 1A /M 1B while maintaining the input common mode at 0.25V.…”
Section: Architectural Level Solutionsmentioning
confidence: 99%
“…In this design, the body voltages of all NMOS devices are adjusted together in order to compensate for part of the V T variations over process, temperature and voltage; a similar PMOS body bias circuit is used (not shown). This OTA achieves a DC gain of 45dB, a gain-bandwidth product of 175MHz for a load capacitance of 4pF and a power consumption of 625µW from a 0.5V supply and was used in the design of variable gain amplifiers and continuous-time baseband filters [28]. …”
Section: Architectural Level Solutionsmentioning
confidence: 99%
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