2014
DOI: 10.1109/jssc.2014.2350260
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A 1.1 nW Energy-Harvesting System with 544 pW Quiescent Power for Next-Generation Implants

Abstract: This paper presents a nW power management unit (PMU) for an autonomous wireless sensor that sustains itself by harvesting energy from the endocochlear potential (EP), the 70–100 mV electrochemical bio-potential inside the mammalian ear. Due to the anatomical constraints inside the inner ear, the total extractable power from the EP is limited to 1.1–6.25 nW. A nW boost converter is used to increase the input voltage (30–55 mV) to a higher voltage (0.8 to 1.1 V) usable by CMOS circuits in the sensor. A pW Charge… Show more

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Cited by 144 publications
(53 citation statements)
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References 26 publications
(47 reference statements)
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“…1), where in both cases the body diode or the reverse conduction introduce some additional losses to the already present conduction losses [6], [12]. The leakage losses originate from the subthreshold leakage currents through the switches and may become significant when very low input power levels are targeted [13].…”
Section: System Architecturementioning
confidence: 99%
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“…1), where in both cases the body diode or the reverse conduction introduce some additional losses to the already present conduction losses [6], [12]. The leakage losses originate from the subthreshold leakage currents through the switches and may become significant when very low input power levels are targeted [13].…”
Section: System Architecturementioning
confidence: 99%
“…2) Switching Losses: The switching losses arise from driving the gate capacitances of the nMOS and pMOS switches, C N and C P , respectively, and the parasitic capacitance at node X, C X [13]. The switching losses can be approximated as:…”
Section: ) Conduction Lossesmentioning
confidence: 99%
“…The proposed technique aims to mitigate the influence of the switching losses and maintain a high efficiency of the converter at low power levels. To achieve high efficiency, the optimal values of the power transistors' widths (W N and W P ), switching frequency (f s ) and inductor (L) can be determined [12], [13]. For these values, the sum of P loss and P ctrl is minimized.…”
Section: Losses Analysis At Low Voltage/power Levelsmentioning
confidence: 99%
“…3) for different values of the input voltage. The information about the input voltage level can be obtained directly from the control block without any additional circuitry, as in most of the low power energy harvesting systems [6]- [8], [12], [13]. This is because the duration of the pMOS switch ON time, τ P , generated by the control block, is directly proportional to the input voltage.…”
Section: Implementation Of the Adaptive Sizesmentioning
confidence: 99%
“…While the DBB CP in (Kim et al, 2015) have benefits such as low processing cost, low start-up voltages at 150 mV, high efficiency of 72.5% at V IN = 450 mV and reduced leakages while maintaining high on current which promotes LV applications, the structure suffers from additional DBB control circuitry, usages of 6×10 nF off-chip capacitors and still a low 34% pumping efficiency at low voltages (180 mV). On the other hand, Bandyopadhyay et al (2014) proposed an ultra low power CP similar to Fig. 7b with a gate driver that reduces leakages based on Favrat et al (1998) voltage doublers model.…”
Section: Cross-coupled Charge Pumpmentioning
confidence: 99%