A 1.2-V 4.2-&lt;formula formulatype="inline"&gt; &lt;tex Notation="TeX"&gt;$\hbox{ppm}/^{\circ}\hbox{C}$&lt;/tex&gt;&lt;/formula&gt; High-Order Curvature-Compensated CMOS Bandgap Reference

Duan, Quanzhen; Roh, Jeongjin

doi:10.1109/tcsi.2014.2374832

Cited by 106 publications

(22 citation statements)

References 18 publications

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“…The traditional bandgap reference [1,2] can only reach several tens of ppm TC. Many compensation methods are adopted to improve TC recently [3][4][5][6][7]. Two BGR cores summation compensation utilizes the summation of the two balanced curvature-up and curvature-down currents [3].…”

Section: Introductionmentioning

confidence: 99%

“…Many compensation methods are adopted to improve TC recently [3][4][5][6][7]. Two BGR cores summation compensation utilizes the summation of the two balanced curvature-up and curvature-down currents [3]. The second-order compensation utilizes the difference of the two non-linear CTAT voltage [4].…”

Section: Introductionmentioning

confidence: 99%

“…Other compensation methods, such as VBE linearization [8,9], temperature-dependent resistor ratio compensation [10], resistor-less, successive voltage step compensation [11], base current compensation [12], subthreshold compensation [13], and so on. However, some of these compensations rely upon the matching of transistor [3,14,15], resistor [3], the high beta bipolar [7], process stability or power supply voltage, etc. Reference [3,5] has no trimming, but its output variation range is large, which is not suitable for high precision measurement.…”

Section: Introductionmentioning

confidence: 99%

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A 2.6 ppm/°C 2.5 V Piece-Wise Compensated Bandgap Reference with Low Beta Bipolar

et al. 2019

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Traditional bandgap reference (BGR) is sensitive to process variation and is not suitable for mass production. Consequently, a stacked piece-wise compensated bandgap reference (SPWBGR) with low beta bipolar is proposed, designed and fabricated in the 0.18 μm high-voltage (HV) BCD process. Two stacked BGR (SBGR) cores make up the proposed BGR circuit. Through setting the target reference voltage near the output voltage of SBGR cores, the feedback resistor ratio is reduced and the base current side-effect is significantly decreased. Notably, the SBGR core is implemented by the low beta npn bipolar and it relaxes the requirement for the high beta bipolar. The two SBGR cores are almost identical except for the temperature slope and feedback ratio. The two cores have different zero temperature coefficient (TC) points, one is set at −5 °C, and the other is set at 60 °C, named as SBGRA and SBGRB, respectively. The SBGRA and SBGRB output the same voltage at their zero TC point. The higher voltage of SBGRA and SBGRB is the output voltage. Through the process of tracking the maximum value of different SBGR cores, the proposed SPWBGR achieves 2.6 ppm/°C TC from −40 to 100 °C. As a result, the average TC for five random samples is 5.3 ppm/°C. The line regulation is 2 mV/V from 4.5 to 5.5 V power supply. The current consumption is 6.8 µA. The active area of the proposed BGR is 0.075 mm2.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A 2.6 ppm/°C 2.5 V Piece-Wise Compensated Bandgap Reference with Low Beta Bipolar

et al. 2019

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“…First-order compensation is considered to be a basic approach to implement high-precision BGRs, which, however,can only help to achieve a temperature coefficient between 20 to 100 ppm/°C [1]. To solve this problem, many high order curvature correction techniques have been developed [2,3,4,5,6,7], in which, auxiliary circuits with considerable area must be employed. For optimizing the temperature coefficients of BGRs without auxiliary circuits, different types of resistors are employed which lacks of a full elaboration on the selections of resistors types [8].…”

Section: Introductionmentioning

confidence: 99%

Method for BGR’s second-order temperature compensation using resistor combinations with specified temperature coefficients

Zheng

Dai

2017

IEICE Electron. Express

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In this paper, an original method is proposed to implement temperature compensation for a bandgap reference (BGR) circuit without any auxiliary circuits. By employing resistor combinations (formed by different type of resistors) with specified temperature coefficients (TC), the temperature coefficient of a previous reported bandgap reference is improved from 22.11 ppm/°C to 3.499 ppm/°C (−25°C-85°C). In order to accomplish the improvement, a useful model is also proposed to help understand the relationship among the TCs of resistors' combinations and BGR.

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“…The accuracy of this method is limited by the non-linearities of the bipolar junction transistor. In order to deal with this issue, some designs utilize a curvature temperature compensation method, thus achieving improved temperature drift (TD) performance [6][7][8][9][10][11][12][13][14][15][16][17][18]. Subsequent architectures focus on using only MOS devices to generate a reference voltage [19][20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

A 0.75‐V, 4‐μW, 15‐ppm/°C, 190 °C temperature range, voltage reference

Andreou

Georgiou

2015

Circuit Theory & Apps

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A low-voltage, low-power, low-area, wide-temperature-range CMOS voltage reference is presented. The proposed reference circuit achieves a measured temperature drift of 15 ppm/°C for an extremely wide temperature range of 190°C (À60 to 130°C) while consuming only 4 μW at 0.75 V. It performs a high-order curvature correction of the reference voltage while consisting of only CMOS transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. A trade-off of this circuit topology, in its current form, is the high line sensitivity. The design was fabricated using TowerJazz semiconductor's 0.18-μm standard CMOS technology and occupies an area of 0.039 mm 2 . The proposed reference circuit is suitable for high-precision, lowenergy-budget applications, such as mobile systems, wearable electronics, and energy harvesting systems.

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A 1.2-V 4.2-<formula formulatype="inline"> <tex Notation="TeX">$\hbox{ppm}/^{\circ}\hbox{C}$</tex></formula> High-Order Curvature-Compensated CMOS Bandgap Reference

Cited by 106 publications

References 18 publications

A 2.6 ppm/°C 2.5 V Piece-Wise Compensated Bandgap Reference with Low Beta Bipolar

A 2.6 ppm/°C 2.5 V Piece-Wise Compensated Bandgap Reference with Low Beta Bipolar

Method for BGR’s second-order temperature compensation using resistor combinations with specified temperature coefficients

A 0.75‐V, 4‐μW, 15‐ppm/°C, 190 °C temperature range, voltage reference

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