A 1.5 V, Single-Supply, One-Transistor CMOS EEPROM

Gerber, B.; Martin, Jean-Christophe; Fellrath, J.

doi:10.1109/esscirc.1980.5468761

Cited by 3 publications

(4 citation statements)

References 3 publications

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“…The simulation results are in good agreement with the theoretical results of (7) and (8). The worst error was lower than 10% and 17% for the double and triple charge pumps respectively and was found after 5 clock periods and for K = 20.…”

Section: Model Validationsupporting

confidence: 83%

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Double and triple charge pumps with mos diodes: Dynamic models to an optimized design

Cataldo

Palumbo

1994

Circuit Theory & Apps

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In this paper the dynamic models of the double and triple charge pumps are extended to circuits in which the diodes are realized with an MOS transistor having a drain-gate contact. In this circuit realization we must take into account the influence of the source-substrate voltage on the threshold voltage Vt.The effects of the source-substrate voltage on the dynamic behaviour are analysed and discussed in detail. Moreover, simple equations allowing one to perform a pencil-and-paper area-efficient optimized design are developed from the two new models.The models obtained are also validated by SPICE simulation of the circuit assuming a typical CMOS 3 gm process.

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Section: Model Validationsupporting

confidence: 83%

“…The output voltage increment was measured after 5, 10 and 15 clock periods and then compared with the results from (7) or (8). Naturally, to simplify the comparison and for the reason discussed above, we normalized the results to the maximum voltage increment.…”

Section: Model Validationmentioning

confidence: 99%

Double and triple charge pumps with mos diodes: Dynamic models to an optimized design

Cataldo

Palumbo

1994

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…for an even number of stages for an odd number of stages (5) the total charge consumed during the period j can be written as…”

Section: A Behavioral Modelmentioning

confidence: 99%

“…These circuits find applications in power IC's [1]- [4] and EEPROMs [5]- [8]. With the reduction of the power supply to values as low as 1.5 V which allow IC power dissipation to be reduced, the interest in charge pump circuits is continuously growing [9]- [12].…”

Section: Introductionmentioning

confidence: 99%