A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems

Lee, Jangwoo; Na, Daehoon; Kavala, Anil; Cho, Hwasuk; Lee, Jun-Ha; Yang, Manjae; Song, Eunjin; Kim, Tongsung; Lee, Seon-Kyoo; Jang, Dong-Hoon; Chun, Byung-Kwan; Jo, Youngmin; Jung, Sunwon; Jung, Doo-Il; Kim, Chanho; Kang, Daewoon; Lee, Tae-Sung; Jeong, Byunghoon; Yoon, Chi-Weon; Kang, Dong‐Ku; Lee, Seungjae; Ihm, Jungdon; Byeon, Dae Seok; Lee, Jin-Yup; Hwang, Sangjoon; Song, Jay Hyok

doi:10.1109/vlsicircuits18222.2020.9163052

Cited by 7 publications

(2 citation statements)

References 3 publications

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“…Static RAM (SRAM) [1][2][3][4][5][6][7][8][9][10] and dynamic RAM (DRAM) [11][12][13][14][15][16][17][18][19][20] (conventional volatile memories) suffer from significant leakage power and flash memory [21][22][23][24][25][26][27][28][29][30] (conventional non-volatile memories (NVMs)) suffers from high write power and poor endurance/ performance. However, emerging NVMs can be beneficial since they offer zero leakage and high scalability, density, and endurance [31].…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories

Khan

Ghosh

2021

JLPEA

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Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a tolerable limit. These new technologies offer high density and consume zero leakage power and can bridge the gap between processor and memory. The desirable properties of emerging NVMs make them suitable candidates for several applications including replacement of conventional memories. However, their unique characteristics introduce new data privacy and security issues. Some of them are already available in the market as discrete chips or a part of full system implementation. They are considered to become ubiquitous in future computing devices. Therefore, it is important to ensure their security/privacy issues. Note that these NVMs can be considered for cache, main memory, or storage application. They are also suitable to implement in-memory computation which increases system throughput and eliminates von Neumann bottleneck. Compute-capable NVMs impose new security and privacy challenges that are fundamentally different than their storage counterpart. This work identifies NVM vulnerabilities and attack vectors originating from the device level all the way to circuits and systems, considering both storage and compute applications. We also summarize the circuit/system-level countermeasures to make the NVMs robust against security and privacy issues.

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Section: Introductionmentioning

confidence: 99%

Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories

Khan

Ghosh

2021

JLPEA

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“…• 16Tb Flash memory is proposed in [3], which works with speed 1.8GB/s/pin. 20nm CMOS technology is used.…”

Section: Introductionmentioning

confidence: 99%

BIST Architecture for Magnetic Memories

Babayan

2020

Mathematical Problems of Computer Science

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Magnetic random-access memory (MRAM) is one of the emerging memory technologies, which can be considered as the next universal memory because of its good parameters. Nevertheless, this type of memory is not guaranteed from defects and it is very important to understand the fault typology and develop a test solution that addresses these faults. In this paper a Built-in Self-Test (BIST) solution is presented, which is specifically tailored for MRAMs and efficiently deals with MRAM specific faults.

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