2013 IEEE International Conference of Electron Devices and Solid-State Circuits 2013
DOI: 10.1109/edssc.2013.6628095
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A 1.8ppm/°C Low Temperature Coefficient Curvature Compensated Bandgap for the Low Voltage Application

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Cited by 3 publications
(2 citation statements)
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“…Only standard CMOS process implementations are considered for comparison. The TC of designed reference circuit is higher compared to reference architecture presented in References [14,16]. However, both designs require complex post-fabrication trimming schemes to nullify process variations.…”
Section: Comparisonmentioning
confidence: 94%
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“…Only standard CMOS process implementations are considered for comparison. The TC of designed reference circuit is higher compared to reference architecture presented in References [14,16]. However, both designs require complex post-fabrication trimming schemes to nullify process variations.…”
Section: Comparisonmentioning
confidence: 94%
“…where 0 is carrier mobility at absolute temperature. Expression (14) shows that the slope of V GS with respect to the temperature is negative as all the terms in this expression have negative coefficients. Simulation results given in Figure 4(a) support the argument.…”
Section: Effect Of the á On Subthreshold V Gsmentioning
confidence: 99%