A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V

Zhang, Tao; Zhang, Jincheng; Zhou, Hong; Chen, Tangsheng; Zhang, Kai; Hu, Zhuangzhuang; Bian, Zhaoke; Dang, Kui; Wang, Yi; Zhang, Li; Ning, Jing; Ma, Pengtao

doi:10.1109/led.2018.2864874

Cited by 37 publications

(27 citation statements)

References 29 publications

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“…The dynamic R ON,SP even at 100 V reserve stress voltage is just 1.18 times of the one without reverse stress, which is comparable to Ref. [8]. The limited increase in the dynamic R ON,SP contributes to the reduction in interface state.…”

Section: Resultssupporting

confidence: 70%

“…The degradation of dynamic R ON,SP needs further work. Figure 10 presents the benchmark plot of BV versus R ON,SP for GaN power diode on Si/SiC/sapphire substrates [8,10,22,[25][26][27][28][29][30][31]. The proposed device with L AC…”

Section: Resultsmentioning

confidence: 99%

“…Figure 10 presents the benchmark plot of BV versus R ON,SP for GaN power diode on Si/SiC/sapphire substrates [ 8 , 10 , 22 , 25 – 31 ]. The proposed device with L AC of 11 μm demonstrates a BV of 1109 V with a corresponding R ON,SP of 1.17 mΩ cm 2 , leading to a high Baliga’s FOM of 1051 MW/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

“…AlGaN/GaN heterostructure-based lateral diode is an attractive device because of the high electron mobility of the two-dimensional electron gas (2DEG), high electron saturation velocity, and high breakdown electric field [1][2][3]. Extensive efforts have been made to achieve a low turn-on voltage (V ON ), a low reverse leakage current and a high breakdown voltage (BV) for the GaN diodes used in converters and inverters for power supplies and power factor corrections [4][5][6][7][8][9][10][11][12]. Various approaches have been proposed to solve the non-uniform distribution of the electric field.…”

Section: Introductionmentioning

confidence: 99%

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Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

et al. 2020

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An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaNtop/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the 2DEH and 2DHG are partially depleted and then completely disappear. There remain the fixed positive and negative polarization charges, forming the polarization junction. Therefore, a flat electric field in the drift region and a high breakdown voltage (BV) are obtained. Moreover, the anode is recessed to reduce turn-on voltage (V ON). The low-damage ICP etching process results in the improved Schottky contacts, and a low leakgae current and a low V ON is obtained. The fabricated SBD exhibits a BV of 1109 V with anode-to-cathode distance (L AC) of 11 μm. The fabricated SBDs achieve a low V ON of 0.68 V with good uniformity, a high on/off current ratio ∼ 10 10 at room temperature, a low specific on-resistance (R ON,SP) of 1.17 mΩ cm 2 , and a high Baliga's figure-of-merit (FOM) of 1051 MW/cm 2 .

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Section: Resultssupporting

confidence: 70%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

et al. 2020

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“…Free‐standing GaN substrates allow epitaxial growth of a thick drift layer with low dislocation density. Compared with a p–n diode, a Schottky diode has the advantage of a lower turn‐on voltage . The key issue is to form thick, high‐quality n‐GaN layers with low carrier density for the drift layer.…”

Section: Introductionmentioning

confidence: 99%

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

Shiojima

Horikiri

Yoshida

et al. 2019

Physica Status Solidi (b)

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The effect of the surface off‐angle toward either the a‐ or m‐axis on the defect formation is characterized using deep‐level transient spectroscopy (DLTS) in conjunction with the carrier concentration for Ni Schottky contacts formed on n‐GaN drift layers. In both noncontact and conventional capacitance–voltage results, off‐angle dependence on carrier concentration is observed. For all samples, a large dominant peak appears at approximately 270 K in the DLTS spectra and is attributed to E3 (EC − 0.57–0.61 eV) defects. Carbon atoms can act as carrier compensators and form E3 defects. These results can be interpreted based on how C incorporation during crystal growth depends on the off‐angle.

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Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Wang

Tyagi

et al. 2023

Advanced Materials

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Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3C2Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off‐state current (IOFF) of 10−7 mA mm−1, a record high ION/IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off‐state drain breakdown voltage of 1085 V, and a near‐ideal subthreshold swing of 61 mV dec−1. This work shows the great potential of MXene films as gate electrodes in wide‐bandgap semiconductor devices.

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A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V

Cited by 37 publications

References 29 publications

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

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A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V

Cited by 37 publications

References 29 publications

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Contact Info

Product

Resources

About

Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors