2021
DOI: 10.1002/cta.3171
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A 1‐GHz GC‐eDRAM in 7‐nm FinFET with static retention time at 700 mV for ultra‐low power on‐chip memory applications

Abstract: Conventional static random‐access memory (SRAM) suffers from high leakage power in advanced complementary metal‐oxide‐semiconductor nodes. Meanwhile, gain‐cell embedded dynamic random‐access memory (GC‐eDRAM) is an area‐efficient alternative to SRAM, although it requires periodic refresh cycles. In this regard, this study proposes a fin field‐effect transistor (FinFET)‐based 5T GC‐eDRAM bitcell that addresses the leakage power issue of SRAM while avoiding the bandwidth‐consuming refreshes of GC‐eDRAM. Furtherm… Show more

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Cited by 4 publications
(2 citation statements)
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“…In the research work [12], Changmin Lee et.al propose a Non-Volatile Dual In-line Memory Module architecture that incorporates several system-wide techniques to enable nondeterministic timing, specifically asynchronous timing, on synchronous DDR4 memory interfaces. To validate our proposal, we develop a functional prototype of the memory architecture on an x86-64 server system.…”
Section: International Journal On Recent and Innovation Trends In Com...mentioning
confidence: 99%
“…In the research work [12], Changmin Lee et.al propose a Non-Volatile Dual In-line Memory Module architecture that incorporates several system-wide techniques to enable nondeterministic timing, specifically asynchronous timing, on synchronous DDR4 memory interfaces. To validate our proposal, we develop a functional prototype of the memory architecture on an x86-64 server system.…”
Section: International Journal On Recent and Innovation Trends In Com...mentioning
confidence: 99%
“…According to the level of performance requirements of various task requirements [2][3][4], "level matching" should be adopted to allow the chip to work in its "comfort zone" to achieve the maximum energy consumption ratio range [5][6][7][8][9]. The following uses some common "high and low matching" strategies to introduce the lowpower chip architecture design framework of this design [10].…”
Section: Introductionmentioning
confidence: 99%