A 1 MHz Half-Bridge Resonant DC/DC Converter Based on GaN FETs and Planar Magnetics

Abstract

A 1 MHz half-bridge resonant DC/DC converter based on GaN FETs and planar magnetics is proposed in this paper which improves the system efficiency and power density. The resonant network can achieve satisfactory soft-switching characteristics based on a small impedance angle, which greatly reduces the losses of switches and diodes. The losses characteristics during the turn-on and turn-off transitions are detailed analyzed. The calculation results show that the GaN FETs with low output capacitance and on-resistance can achieve fast switching speed and low losses in high frequency conditions. To reduce the profile and increase the power density of the system, planar magnetics are used in this paper. The Response Surface Methodology (RSM) and Modular Layer Model (MLM) are adopted to help design the planar inductor and transformer respectively. Both of the methods offer clearer and more effective ways to design the planar magnetics. A 25W prototype is built to verify the feasibility of the proposed high frequency converter.

Comparative Analysis and Optimization of Power Loss Based on the Isolated Series/Multi Resonant Three-Port Bidirectional DC-DC Converter

“…In order to achieve ZVS, vS1 must be reduced to 0 before vG_S1 reaching a high level. According to [31], toss can be given as Equation (13), where Ioff represents turn-off current; QS1 and QS2 are the output charge of S1 and S2: When S 2 is turned off, after a short delay until v G_S2 drops to V pl , the output capacitor C oss of S1 begins to discharge while C oss of S2 starts to charge. At the same time, v S1 begins to decline, while v S2 rises.…”

“…In order to achieve ZVS, v S1 must be reduced to 0 before v G_S1 reaching a high level. According to [31], t oss can be given as Equation (13), where I off represents turn-off current; Q S1 and Q S2 are the output charge of S 1 and S 2 :…”

“…In order to better analyze Psw_off, the voltage and current waveforms during the turn-off transition are described as Figure 8, where vS2 means the source-drain voltage of S2, Vth is the gate threshold voltage of the switch. According to [31], Psw_off can be divided into two parts. In toff1, iS2 keeps constant, while vS2 When v S1 drops to 0, I S1 begins flow through parallel diode of S1 until v G_S1 reaches a high level.…”

Entire Magnetic Integration Method of Multi-Transformers and Resonant Inductors for CLTLC Resonant Converter

“…Owing to the quantities and diverse connection ways of passive components (including capacitors, inductors and transformers) in the resonant unit, the flexible resonant characteristics can be achieved. In view of the endless research on this kind of converters, the topologies could be numerous [4][5][6][7][8].…”

Review of GaN Nanostructured Based Devices

“…The advantage with these materials is the flexible bandgap varying from 0.7 to 6 eV hence covering an ultra-broad spectrum, from deep ultraviolet up to near infrared [2], allowing the development of numerous applications. Solar cells based on nitride materials have readily been investigated for terrestrial and space-based applications [3].…”