A 10 W, 35 % Power Added Efficiency 6 to 18 GHz GaN Power Amplifier

Gasmi, Ahmed; Leblanc, Rémy; Wroblewski, B.; Lecourt, F.; Poulain, Julien; Cutivet, Adrien; Hajjar, Ahmad Al

doi:10.23919/eumc48046.2021.9338162

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…Table 1 shows a comparison of state-of-the-art composite GaN power amplifiers using OMMIC’s 100 nm GaN-on-Si technology. The designs in [ 10 , 11 ] outperform ours in terms of PAE and output power, but they achieve this by driving their transistors to the maximum power density allowed by the technology. In contrast, our design prioritizes reliability and longevity by sacrificing some power to keep the transistors operating well below 200 °C (assuming a backside temperature of 85 °C).…”

Section: Measurement Resultsmentioning

confidence: 99%

“…In terms of area, our design occupies a larger footprint due to its lower operating frequency. Although [ 10 ] operates in a similar frequency range, it uses a smaller area because it has only two stages and consequently achieves a lower gain.…”

Section: Measurement Resultsmentioning

confidence: 99%

“…Achieving high output power in an HPA often requires a large number of transistors in parallel in the final stage [8][9][10][11][12][13]. To enhance reliability and extend the HPA's lifespan, it is necessary to ensure that the transistors operate below the maximum power density allowed by the technology.…”

Section: Introductionmentioning

confidence: 99%

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A Ku-Band GaN-on-Si MMIC Power Amplifier with an Asymmetrical Output Combiner

Pino

Khemchandani

Mayor-Duarte³

et al. 2023

Sensors

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In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride on silicon (GaN-on-Si) is presented. The design is based on a three-stage architecture and was implemented using the D01GH technology provided by OMMIC foundry. Details on the architecture definition and design process to maximize delivered power are provided along with stability and thermal analyses. To optimize the amplifier performance, an asymmetry was included at the output combiner. Experimental results show that the HPA achieves a 39.5 dBm pulsed-mode output power, a peak linear gain of 23 dB, a drain efficiency of 27%, and good input/output matching in the 16–19 GHz frequency range. The chip area is 5 × 3.5 mm2 and for the measurements was mounted on a custom-made module. These results demonstrate that GaN-on-Si-based Solid-State Power Amplifiers (SSPAs) can be used for the implementation of Ku-band active radars.

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Section: Measurement Resultsmentioning

confidence: 99%

Section: Measurement Resultsmentioning

confidence: 99%