A 1024-bit nonvolatile 15ns bipolar read-write memory

Shanks, R.R.; Davis, C.

doi:10.1109/isscc.1978.1155755

Cited by 10 publications

(4 citation statements)

References 2 publications

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“…Figure shows an electron micrograph of a crystalline spot produced by a laser pulse from ref . In 1978 data were reported by Burroughs Corporation about the prototype fabrication of a 1024-bit chip, but this was never commercialized.…”

Section: History Of Phase Change Materialsmentioning

confidence: 99%

Phase Change Materials and Their Application to Nonvolatile Memories

2009

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Section: History Of Phase Change Materialsmentioning

confidence: 99%

Phase Change Materials and Their Application to Nonvolatile Memories

2009

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“…In spite of this and other similar demonstrations [184], PCM failed to become the accepted choice for a solid state memory as the required programming energy was much larger than that for DRAM and flash memory. However, the good news is that the energy required for programming scales in proportion with the active volume of the phase change element, and is projected to scale below the pico-Joule range once the diameter of the active volume shrinks below 50 nm [94].…”

Section: Phase Change Memory 17mentioning

confidence: 92%

Phase Change Memory: From Devices to Systems

Qureshi

Gurumurthi

Rajendran³

2011

Synthesis Lectures on Computer Architecture

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“…Another attempt to build a phase change memory device was reported by Roy R. Shanks and Craig Davis of the Burroughs Corporation. They published their results of a 1024-bit phase change memory in 1978 [21], [23].…”

Section: History and Origin Of Phase Change Materials (Gst) And Its A...mentioning

confidence: 99%

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

et al. 2023

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Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

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A 1024-bit nonvolatile 15ns bipolar read-write memory

Cited by 10 publications

References 2 publications

Phase Change Materials and Their Application to Nonvolatile Memories

Phase Change Materials and Their Application to Nonvolatile Memories

Phase Change Memory: From Devices to Systems

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

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