Experimental verification is given for the use of 61 modulation for high-temperature applications ( approximately 150 C) in a standard CMOS process. Switched-capacitor circuits are used to implement a second-order single-stage and a third-order 2-1 MASH 61 modulator with single-bit quantization. The two modulators have an oversampling ratio of 256 with an input signal bandwidth of 500 Hz. The modulators were fabricated in a 1.5-m standard CMOS technology. A fully differential signal path and near minimum sized switches are used to mitigate the effect of large junction-to-substrate leakage current present at high temperatures. Experimental results show both modulators are capable of over 14 bits of resolution at 225 C and over 13 bits of resolution at 255 C. Results show that the single-stage modulator is more resistant to high-temperature circuit impairment than is the MASH cascaded structure.

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ABSTllACTWe report a comprebensive characterization of a 90 nm CMOS technology with CdSiCOH low-k interconnect BEOL. Signifcant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. Results are presented on every aspect of BEOL and chippackage reliability, yields, low-k f i l m parameters, BEOL capacitances and circuit delays on functional chips. All results meet or exceed OUT concurrent 90 nm Cu/FTEOS technology, and support extendibility to 65 nm.