Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology

Edelstein, D.; Davis, C.; Clevenger, L. A.; Yoon, Moongeun; Cowley, A.; Nogami, Takeshi; Rathore, H.; Agarwala, B.; Arai, S.; Carbone, Anna Filomena; Chanda, Kaushik; Cohen, S.; Cote, W.; Cullinan, Michael; Dalton, T.; Das, Sanjit; Davis, P.; Demarest, J.; Dunn, Derren; Dziobkowski, C.; Filippi, R.; Fitzsimmons, J.; Flaitz, P.; Gates, S. M.; Gill, Jason M.R.; Grill, A.; Hawken, D.; Ida, K.; Klaus, D.; Klymko, N.; Lane, Michael; Lane, S.; Lee, J.; Landers, W.; Li, W.-K.; Lin, Yi‐Hsien; Liniger, E.; Liu, X.-H.; Madan, A.; Malhotra, S. G.; Martin, J.; Molis, S.; Muzzy, C.; Nguyen, D.; Nguyen, S.; Ono, Mizuki; Parks, C.; Questad, D.; Restaino, D.; Sakamoto, Atsushi; Shimooka, Y.; Simon, A.; Simonyi, E.; Tempest, S.; Kleeck, T. Van; Vogt, S.; Wang, Y.-Y.; Wille, W.; Wright, John; Yang, Chen-Chi; Ivers, T.

doi:10.1109/iitc.2004.1345750

Cited by 15 publications

(3 citation statements)

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“…The low-k material enables a lower capacitance ͑C͒ between adjacent Cu wires, and lower C improves signal propagation speed, reduces power consumption, and reduces the signal interaction between lines ͑known as "cross talk"͒. 1,2 At the 45 nm node, porosity was introduced into the interconnect structures in the form of porous dielectrics based on SiCOH ͑or pSiCOH͒ ILDs with a k value of 2.4. 3 The pSiCOH dielectrics are deposited by plasma-enhanced chemical vapor deposition ͑PECVD͒.…”

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Adjusting the Skeleton and Pore Structure of Porous SiCOH Dielectrics

Gates

Dubois

Ryan

et al. 2009

J. Electrochem. Soc.

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The addition of a carbosilane skeleton precursor to a plasma-enhanced chemical vapor deposition process producing porous SiCOH dielectrics (pSiCOH) is shown to affect the carbon content and the pore structure of pSiCOH. Positron annihilation lifetime spectroscopy (PALS) reveals that added carbosilane reduces pore connectivity. PALS also shows evidence of both smaller ultramicropores (<0.7nm) and larger supermicropores (0.7nm) in these materials. The method of normalN2 adsorption porosimetry and the alpha-plot analysis provide an understanding of the PALS connectivity results through a correlation of high pore connectivity with a high fraction of porosity as the larger supermicropores. Low pore connectivity correlates with a low fraction of the porosity as supermicropores. A potential figure of merit for pSiCOH is then obtained, which is the amount of the porous volume present as the smallest ultramicropores. This is derived as the difference in porous volumes measured by normalN2 adsorption vs toluene adsorption. The addition of a carbosilane precursor to pSiCOH deposition results in pSiCOH with a smaller average pore size and reduced pore connectivity.

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confidence: 99%

Adjusting the Skeleton and Pore Structure of Porous SiCOH Dielectrics

Gates

Dubois

Ryan

et al. 2009

J. Electrochem. Soc.

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“…Of particular significance was the development of the low-k SiCOH film [10,11], which has a relative dielectric constant of ;3.0 and an integrated ''effective'' dielectric constant (including interconnect caps) of ;3.2. SiCOH films are known to be tensile and mechanically relatively weak compared with the SiO 2 or fluorinated SiO 2 glass films which they replace; thus, they are more susceptible to brittle fracture from thermomechanical mismatches with the Cu or from chip-package interactions [12].…”

Section: Interconnect Technologymentioning

confidence: 99%

Optimization of silicon technology for the IBM System z9

Poindexter

Stiffler

et al. 2007

IBM J. Res. & Dev.

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IBM 90-nm silicon-on-insulator (SOI) technology was used for the key chips in the System z9e processor chipset. Along with system design, optimization of some critical features of this technology enabled the z9e to achieve double the system performance of the previous generation. These technology improvements included logic and SRAM FET optimization, mask fabrication, lithography and wafer processing, and interconnect technology. Reliability improvements such as SRAM optimization and burn-in reliability screen are also described.

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“…PECVD fluorinated silica glass (FSG) films with dielectric constant in the K = 3.6–3.8 range compared to K = 4 for SiO 2 were the first reduced permittivity insulators to appear after the introduction of copper interconnects [ 5 ]. Carbon-doped oxides (CDO, or SiCOH) with K = 3 and below followed next [ 6 ]. More recently, multiphase carbon-doped materials in which an organic phase is burned out either thermally, by electron-beam (e-beam) radiation, or by ultraviolet (UV) radiation to create porosity and K < 2.6 have been introduced [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

Porous Dielectrics in Microelectronic Wiring Applications

McGahay

2010

Materials

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Porous insulators are utilized in the wiring structure of microelectronic devices as a means of reducing, through low dielectric permittivity, power consumption and signal delay in integrated circuits. They are typically based on low density modifications of amorphous SiO2 known as SiCOH or carbon-doped oxides, in which free volume is created through the removal of labile organic phases. Porous dielectrics pose a number of technological challenges related to chemical and mechanical stability, particularly in regard to semiconductor processing methods. This review discusses porous dielectric film preparation techniques, key issues encountered, and mitigation strategies.

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Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology

Cited by 15 publications

References 0 publications

Adjusting the Skeleton and Pore Structure of Porous SiCOH Dielectrics

Adjusting the Skeleton and Pore Structure of Porous SiCOH Dielectrics

Optimization of silicon technology for the IBM System z9

Porous Dielectrics in Microelectronic Wiring Applications

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