A 10GHz low phase-noise CMOS voltage-controlled oscillator using dual-transformer technology

Chiu, Hsien‐Chin; Cheng, Chia-Shih; Yang, Yi-Tzu; Wei, Chien‐Cheng

doi:10.1016/j.sse.2007.12.008

Cited by 9 publications

(3 citation statements)

References 11 publications

(12 reference statements)

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“…The MEMS VCO has obtained low phase noise with low power consumption compared with the CMOS VCO. This VCO has an improvement in power consumption by 41% compared with VCO in [31]. …”

Section: Results and Comparisonmentioning

confidence: 99%

Design and analysis of a 10GHz LC-VCO using MEMS inductor

et al. 2012

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This paper presents design and analysis of a 10GHz inductance-capacitance (LC)-Voltage-Controlled Oscillators (VCO) implemented with a very high quality (Q) factor on-chip Micro-Electro-Mechanical Systems (MEMS) inductor using 0.25µm silicon-on-sapphire (SOS) technology. A new symmetric topology of suspended MEMS inductor is proposed to reduce the length of the conductor strip and achieve the lowest series resistance in the metal tracks. This MEMS inductor has been suspended above the high resistivity SOS substrate to minimise the substrate loss and therefore, achieve a very high Q-factor inductor. A maximum Q-factor of 191.99 at 11.7GHz and Q-factor of 189 at 10GHz has been achieved for a 1.13nH symmetric MEMS inductor. The proposed inductor has been integrated with a VCO on the same substrate using the Metal layers in SOS technology removing the need for additional bond wire. The 10GHz LC-VCO has achieved a phase noise of -116.27dBc/Hz and -126.19dBc/Hz at 1MHz and 3MHz of offset frequency, respectively. It consumes 4.725mW of power from 2.5V supply voltage while achieving a Figure of Merit (FOM) of -189.5dBc/Hz.

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“…The MEMS VCO has obtained low phase noise with low power consumption compared with the CMOS VCO. This VCO has an improvement in power consumption by 41% compared with VCO in [31]. …”

Section: Results and Comparisonmentioning

confidence: 99%

Design and analysis of a 10GHz LC-VCO using MEMS inductor

et al. 2012

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“…Generally, the VCO can be built using the LC resonator structure [4] or ring oscillator [5] in the CMOS process. We will focus on the study of ring VCO.…”

Section: Introductionmentioning

confidence: 99%

On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications

et al. 2013

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A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This device offers new approaches in circuit design and allows developing new functionalities through two operating modes: Threshold Voltage Adjustable Mode, where the DCG-FGT behaves like a MOS transistor with an electrically adjustable threshold voltage. Mixer Signal Mode where the DCG-FGT can mix two independent signals on its floating gate. This device is developed to be fully compliant with CMOS Non Volatile Memory (NVM) process. An electrical model of the DCG-FGT has been implemented in an electrical simulator to be available for analog design. A DCG-FGT based ring oscillator is studied in this paper.

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“…VCOs fabricated with GaAs or bipolar technology have been widely used owing to their high operation frequency and good noise performance. In recent years, VCOs fabricated using standard complementary metal oxide semiconductor (CMOS) technologies have been widely studied and are generally built of inductor-capacitor (LC) resonators [1][2][3] or ring oscillators. [4][5][6][7][8][9][10][11] LC resonator VCOs possess a better noise performance and a higher operation frequency.…”

Section: Introductionmentioning

confidence: 99%

Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Wide Tuning Range in 0.18 µm Complementary Metal Oxide Semiconductor

Tiao¹,

Sheu²,

Tsao³

2011

Jpn. J. Appl. Phys.

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A new complementary metal oxide semiconductor (CMOS) differential delay cell for a voltage-controlled ring oscillator with a wide tuning range and high speed is proposed in this paper. The new differential delay cell employing a complementary current control scheme can increase not only the control voltage range but also the operation frequency in low-voltage operation. Using the new delay cells, a ring voltage-controlled oscillator employing a three-stage structure and multiple-pass loop techniques is implemented in the 0.18 µm single-poly–six-metal (1P6M) CMOS process at a 1.8 V supply voltage to achieve a wide tuning range and high speed. Measured results show that a wide operation frequency range from 8.36 to 1.29 GHz is accomplished for the full-range control voltages from 0 to 1.8 V. When the supply voltage is 1 V, the operation frequencies are from 4.09 to 0.479 GHz for the full-range control voltages from 0 to 1 V. The measured phase noise is -100.22 dBc/Hz at 1 MHz offset from the 8.35 GHz center frequency and the figure of merit (FOM) is -159.95 dBc/Hz. The chip core area without PAD is 106×76.2 µm2.

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A 10GHz low phase-noise CMOS voltage-controlled oscillator using dual-transformer technology

Cited by 9 publications

References 11 publications

Design and analysis of a 10GHz LC-VCO using MEMS inductor

Design and analysis of a 10GHz LC-VCO using MEMS inductor

On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications

Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Wide Tuning Range in 0.18 µm Complementary Metal Oxide Semiconductor

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