A 12-GHz High-Efficiency Tapered Traveling-Wave Power Amplifier With Novel Power Matched Cascode Gain Cells Using SiGe HBT Transistors

High‐efficiency tapered distributed power amplifier with 2‐μm GaAs HBT process

“…Here, the cutoff frequency f T is introduced in FOM to represent the technology used. Table 1 gives the performance comparison with the state-ofthe-art using the different technologies in recent 5 years [11][12][13][14][15][16]. From the table, we can see that our work has a high FOM considering the trade-off among the gain, bandwidth, dc power, P 1dB and f T .…”

Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

“…In Ref. 8, it was proposed to use a small-valued capacitor at the base of the cascode cells CB device to delay its saturation by capacitive voltage division. It was also shown that inclusion of an additional inductance to form a complete interstage matching network between the devices resulted in an optimal output power for a distributed PA in the DC-12-GHz frequency range.…”

Design and analysis of ultra-broadband distributed power amplifiers for multi-platform communications

“…Spice Gummel- References -HBT 1,2,3,4 are from [13], [14], [37] and [1] respectively, HEMT 1,2 are from [16] and [35], FET 1 is from [12], BICMOS 1 is from [11]. [13], [14] and [16] designs are powered from 8V supply, mean while [35] is from 35V, [12] is from 3V, [11]and [37] are from 5V and [1]…”

“…Among the broadband amplifier techniques, the distributed amplifier (DA) is a wellestablished technique [11,13,14,46]. The flat gain and the good terminal match are…”

“…and typically around 10dB [11,[14][15][16]71]. Some work on the power gain improvement is given in [18], however no analytical solutions are provided.…”